Patents Assigned to Xiamen Sanan Optoelectronics Technology Co., Ltd.
  • Publication number: 20240413291
    Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.
    Type: Application
    Filed: August 21, 2024
    Publication date: December 12, 2024
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Su-Hui Lin, Lingyuan Hong, SHENG-HSIEN HSU, Sihe CHEN, Dazhong CHEN, Gong CHEN, CHIA-HUNG CHANG, KANG-WEI PENG
  • Patent number: 12095010
    Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: September 17, 2024
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
  • Patent number: 12080989
    Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.
    Type: Grant
    Filed: August 11, 2023
    Date of Patent: September 3, 2024
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Hui Chen, Junpeng Shi, Xinglong Li, Chi-Wei Liao, Weng-Tack Wong, Chih-Wei Chao, Chen-ke Hsu
  • Patent number: 11804584
    Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: October 31, 2023
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhibai Zhong, Chia-En Lee, Jinjian Zheng, Zheng Wu, Chen-Ke Hsu, Junyong Kang
  • Patent number: 11637223
    Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.
    Type: Grant
    Filed: October 6, 2020
    Date of Patent: April 25, 2023
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaoliang Liu, Anhe He, Kang-wei Peng, Su-hui Lin, Ling-yuan Hong, Chia-hung Chang
  • Patent number: 11631601
    Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: April 18, 2023
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chen-ke Hsu, Jiansen Zheng, Xiaojuan Shao, Kechuang Lin
  • Patent number: 11626547
    Abstract: A UV LED device includes a base, a lens disposed on the base, an adhesive unit, an LED chip unit, and an encapsulating member. The adhesive unit has multiple layers and is connected between the base and the lens such that the base, the lens and the adhesive unit cooperatively define an enclosed space. The LED chip unit is disposed in the enclosed space. The encapsulating member is disposed in the enclosed space, and encapsulates the LED chip unit. The encapsulating member is made of a material the same as a material of at least one layer of the adhesive unit.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: April 11, 2023
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY, CO., LTD.
    Inventors: Junpeng Shi, Weng-Tack Wong, Qiuxia Lin, Xinglong Li
  • Publication number: 20230092504
    Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 23, 2023
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
  • Publication number: 20230088776
    Abstract: A light emitting diode includes: a light emitting layer arranged on at least part of a first semiconductor layer, and a second semiconductor layer; a local defect region over a portion of the second semiconductor layer and extending downward to the first semiconductor layer; a metal layer over a portion of the second semiconductor layer; an insulating layer covering the metal layer, the second and first semiconductor layers in the local defect region, with opening structures over the local defect region and the metal layer, respectively; and an electrode structure over the insulating layer and having a first layer and a second layer, and including a first-type electrode region and a second-type electrode region; wherein an upper surface and a lower surface of the first layer are not flat, and a lower surface of the second layer are both flat.
    Type: Application
    Filed: June 12, 2022
    Publication date: March 23, 2023
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe HE, Suhui LIN, Jiansen ZHENG, Kangwei PENG, Xiaoxiong LIN, Chenke HSU
  • Patent number: 11557580
    Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: January 17, 2023
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Zhibai Zhong, Chia-En Lee, Jinjian Zheng, Jiansen Zheng, Chen-Ke Hsu, Junyong Kang
  • Patent number: 11538965
    Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: December 27, 2022
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Junpeng Shi, Zhen-Duan Lin, Chen-Ke Hsu, Ping Zhang
  • Patent number: 11532769
    Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: December 20, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Su-hui Lin, Feng Wang, Ling-yuan Hong, Sheng-Hsien Hsu, Sihe Chen, Dazhong Chen, Kang-Wei Peng, Chia-Hung Chang
  • Patent number: 11522107
    Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: December 6, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
  • Patent number: 11462517
    Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: October 4, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ping Zhang, Junpeng Shi, Senpeng Huang, Zhen-duan Lin, Shunyi Chen, Chen-ke Hsu
  • Patent number: 11456400
    Abstract: Disclosed is a light-emitting diode including an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The first type semiconductor layer has an outer surface, and a recess extending inwardly from the outer surface. Also disclosed is a method for transferring the light-emitting diode.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: September 27, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zheng Wu, Chia-En Lee, Chen-Ke Hsu
  • Patent number: 11424387
    Abstract: A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: August 23, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chia-En Lee, Chen-Ke Hsu, Zheng Wu
  • Patent number: 11393950
    Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: July 19, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiangbin Zeng, Anhe He, Ling-Yuan Hong, Kang-Wei Peng, Su-Hui Lin, Chia-Hung Chang
  • Patent number: 11393967
    Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: July 19, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Anhe He, Suhui Lin, Jiansen Zheng, Kangwei Peng, Xiaoxiong Lin, Chenke Hsu
  • Patent number: 11362074
    Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: June 14, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shunyi Chen, Junpeng Shi, Weng-Tack Wong, Chen-ke Hsu, Chih-Wei Chao
  • Patent number: 11309297
    Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: April 19, 2022
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaoqiang Zeng, Shaohua Huang, Jianfeng Yang, Canyuan Zhang