Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Abstract: A four-element light emitting diode with a transparent substrate, comprising a AlGaInP light emitting diode (LED) epitaxial wafer, and the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened into a bonding surface, a film is plated on the bonding surface and is bonded with a transparent substrate, and finally a GaAs substrate is removed. The transparent bonding disclosed herein can replace the GaAs substrate made of light absorption materials with the transparent substrate by substrate transfer technology, increasing the light emitting efficiency of the light emitting diode chip and avoiding extremely low external quantum efficiency caused due to the limitations of the material of conventional AlGaInP light emitting diode and the substrate; in addition, with the support of the cut path pre-etching technology, back melting or splashing during the epitaxial layer cutting process is avoided, light emitting efficiency is increased and electric leakage risk is eliminated.

Abstract: A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between different materials is changed and buffered through thermal treatment of annealing under H2 atmosphere or under H2 and NH3 mixed atmosphere, thus eliminating epitaxial wafer warp caused by such stress and improving epitaxial quality and light-emitting efficiency of the light-emitting element.

Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Abstract: A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.

Abstract: A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.

Abstract: A light emitting diode includes a segmented quantum well formed via selective growth method to avoid re-absorption effect of photons in the LED internal quantum well. This improves external extraction efficiency and increases luminance. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, wherein, the upper surface of the first semiconductor layer has a first growth region and a second growth region; the active layer is formed only in the first growth region via selective epitaxial growth; and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth.

Abstract: An AlGaInP light-emitting diode includes from bottom up a substrate, a DBR reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

Abstract: A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Abstract: A semi-polar LED epitaxial structure includes, from bottom to up: a sapphire substrate; a semiconductor bottom layer structure; and a semiconductor functional layer; wherein: a surface of the semiconductor bottom structure has V pits; and a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes. A fabrication method includes: providing a sapphire substrate; growing a semiconductor bottom structure over the sapphire substrate to form V pits on a surface, wherein a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes; and growing a semiconductor functional layer over the semi-polar surface of the semiconductor bottom structure.

Abstract: A nitride light emitting diode includes a substrate and a nitride buffer layer, an n-type layer, a quantum well light emitting layer, and a p-type layer over the substrate. The n-type layer is a superlattice structure formed by alternating undoped AlGaN layers and n-type doped GaN layers. The Al component of the undoped AlGaN layer is controlled to produce first stress that offsets the second stress produced by the n-type doped GaN layer, reducing crystal defects and wrapping caused by impurity doping of the n-type layer. Growth temperature and pressure of the n-type layer are controlled such that thickness of the n-type doped GaN layer is greater than that of the undoped AlGaN layer to improve surface roughness of the undoped AlGaN layer and form an n-type doped GaN layer with a flat surface. Series resistance, crystal defects and wrapping, and optoelectronic properties of the device are therefore improved.

Abstract: A light-emitting diode includes a conductive mask layer planted over a substrate surface. An epitaxial laminated layer is formed over the conductive mask layer via epitaxial growth; and a current channel is formed over the epitaxial laminated layer; during injection, current is firstly conducted to the conductive mask layer through the current channel, and then to the epitaxial laminated layer after horizontal spreading over the conductive mask layer, which effectively improves current spreading uniformity and reduces working voltage of device. Meanwhile, the conductive mask layer reflects light to further improve extraction efficiency and light-emitting luminance.

Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.

Abstract: A light emitting diode package structure allows for an improved light-emitting efficiency by including a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; and a second reflecting material layer surrounding the first transparent material layer. An interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip. A wavelength conversion material layer is over the first reflecting material layer, the flip chip, and the second reflecting material layer.

Abstract: A light-emitting diode chip includes an electrical connection layer is arranged over the light-emitting surface of the light-emitting epitaxial laminated layer, which is not connected with isolation of the dielectric layer. After CMP treatment, the flat surface is plated with a transparent current spreading layer, which reduces horizontal conduction resistance of the transparent current spreading layer and replaces the metal spreading finger for horizontal conduction.

Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0?x?1, 0?y?1) over the sputtered AlN buffer layer.

Abstract: A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.

Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

Abstract: A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.