Patents Assigned to Xidian University
  • Patent number: 10503628
    Abstract: A method for model checking path reduction based on interpolation comprises: reading a C program, performing grammatical and semantic analysis on the C program, and extracting CFG from an abstract syntax tree; adding safety (S) interpolation and error (E) interpolation to the CFG and extending the CFG; in a process of generating ARG according to the CFG, determining, in each state, whether the safety interpolation and the error interpolation are implied by current path formula. The method improves the verification efficiency by computing the S interpolation and the E interpolation, which makes the algorithm of the model checking a better use in large-scale programs. The S interpolation can be used to avoid the unnecessary traversal, greatly reducing the number of ARG state. The E interpolation can be used to quickly determine whether there is a true counterexample in the program, accelerating the program's verification and improving the efficiency.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: December 10, 2019
    Assignee: XIDIAN UNIVERSITY
    Inventors: Cong Tian, Zhao Duan, Zhenhua Duan
  • Patent number: 10498045
    Abstract: A high order vortex wave antenna includes N uniform circle array antennas. The uniform circle array antenna includes M antenna array elements distributed uniformly in axial symmetry on a first circle with a radius of r1. Each antenna array element coincides with an adjacent element after rotating around a center of the first circle by an angle of 2?/M Centers of the first circles of all uniform circle array antennas are distributed uniformly in axial symmetry on a second circle with a radius of r2. Each uniform circle array antenna coincides with an adjacent uniform circle array antenna after rotating around a center of the second circle by an angle of 2?/N.
    Type: Grant
    Filed: July 4, 2017
    Date of Patent: December 3, 2019
    Assignee: XIDIAN UNIVERSITY
    Inventors: Linjun Zhao, Hailin Zhang, Fang Liang
  • Publication number: 20190306193
    Abstract: The present invention relates to the technical field of computer software analysis and discloses an RFC-directed differential testing method of certificate validations in a SSL/TLS implementations which includes: extracting rules from RFC and updating the rules, classifying the rules, further classifying consumer rules and shared rules into breakable rules and unbreakable rules, expressing the rules as variables, and generating a symbolic program; generating low-level test cases by applying the dynamic symbolic execution technique to the symbolic program; assembling high-level test cases i.e. digital certificates according to the low-level test cases; and employing the assembled digital certificates to the differential testing of the certificate validation in SSL/TLS implementations.
    Type: Application
    Filed: May 29, 2018
    Publication date: October 3, 2019
    Applicant: Xidian University
    Inventors: Cong Tian, Chu Chen, Zhenhua Duan
  • Publication number: 20190242824
    Abstract: The invention discloses a two-mode Raman optical projection tomography system. Samples are irradiated by the laser beam after the beam being expanded by beam expander. Optical signal of each mode will be separated by the beam splitter. Sparse sampling method is used for signal collection. Optical transmission projection signal acquisition module collects transmitted light of samples to form optical projection image. Multi-spectral Raman scattering signal acquisition module collects Raman scattering light produced by samples. Background noise is removed from the collected data. Sparse sampling data are reconstructed by using algebraic reconstruction method (ART) based on TV minimization. The three-dimensional structure image obtained by reconstruction and the three-dimensional chemical compositions image are fused to obtain the three-dimensional volume image with multiple information.
    Type: Application
    Filed: January 28, 2019
    Publication date: August 8, 2019
    Applicant: Xidian University
    Inventors: Xueli CHEN, Yonghua ZHAN, Nan WANG, Honghao CAO, Duofang CHEN, Shouping ZHU, Jimin LIANG
  • Patent number: 10365219
    Abstract: The invention discloses a two-mode Raman optical projection tomography system. Samples are irradiated by the laser beam after the beam being expanded by beam expander. Optical signal of each mode will be separated by the beam splitter. Sparse sampling method is used for signal collection. Optical transmission projection signal acquisition module collects transmitted light of samples to form optical projection image. Multi-spectral Raman scattering signal acquisition module collects Raman scattering light produced by samples. Background noise is removed from the collected data. Sparse sampling data are reconstructed by using algebraic reconstruction method (ART) based on TV minimization. The three-dimensional structure image obtained by reconstruction and the three-dimensional chemical compositions image are fused to obtain the three-dimensional volume image with multiple information.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: July 30, 2019
    Assignee: XIDIAN UNIVERSITY
    Inventors: Xueli Chen, Yonghua Zhan, Nan Wang, Honghao Cao, Duofang Chen, Shouping Zhu, Jimin Liang
  • Patent number: 10332691
    Abstract: A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.
    Type: Grant
    Filed: September 1, 2018
    Date of Patent: June 25, 2019
    Assignee: XIDIAN UNIVERSITY
    Inventors: Renxu Jia, Lei Yuan, Yucheng Wang, Tiqiang Pang, Yuming Zhang
  • Publication number: 20190108999
    Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.
    Type: Application
    Filed: September 28, 2016
    Publication date: April 11, 2019
    Applicant: XIDIAN UNIVERSITY
    Inventors: Jincheng Zhang, Jing Ning, Dong Wang, Zhibin Chen, Zhiyu Lin, Yue Hao
  • Publication number: 20190095314
    Abstract: A method for model checking path reduction based on interpolation comprises: reading a C program, performing grammatical and semantic analysis on the C program, and extracting CFG from an abstract syntax tree; adding safety (S) interpolation and error (E) interpolation to the CFG and extending the CFG; in a process of generating ARG according to the CFG, determining, in each state, whether the safety interpolation and the error interpolation are implied by current path formula. The method improves the verification efficiency by computing the S interpolation and the E interpolation, which makes the algorithm of the model checking a better use in large-scale programs. The S interpolation can be used to avoid the unnecessary traversal, greatly reducing the number of ARG state. The E interpolation can be used to quickly determine whether there is a true counterexample in the program, accelerating the program's verification and improving the efficiency.
    Type: Application
    Filed: March 6, 2018
    Publication date: March 28, 2019
    Applicant: Xidian University
    Inventors: Cong Tian, Zhao Duan, Zhenhua Duan
  • Publication number: 20180337753
    Abstract: A method for transmitting an aggregated frame is disclosed. The method includes: estimating channel condition; comparing the channel condition with first threshold for selecting an aggregation scheme; and comparing the channel condition with second threshold, which is different with the first threshold, for selecting an aggregation scheme; performing the aggregation using the selected aggregation scheme with position information, which indicates the positions of sub-frame in the aggregated frame.
    Type: Application
    Filed: July 14, 2016
    Publication date: November 22, 2018
    Applicant: XIDIAN UNIVERSITY
    Inventors: Mingwu YAO, Jilong LIU, Zhiliang QIU
  • Patent number: 10034647
    Abstract: A system for the endoscopic X-ray luminescence computed tomographic imaging is provided.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: July 31, 2018
    Assignee: XIDIAN UNIVERSITY
    Inventors: Jimin Liang, Xueli Chen, Xiaochao Qu, Shouping Zhu, Duofang Chen, Heng Zhao, Jie Tian
  • Patent number: 9976694
    Abstract: A mounting base for supporting and rotating an instrument about two perpendicular axes is disclosed. The mounting base includes a vertical column; a rotatable platform attached to the column by a revolute joint; a rail around the column; at least one rod, an end of the at least one rod connecting with the revolute joint; at least one sliding mechanism, connecting with the other end of the at least one rod, the sliding mechanism sliding on the rail. The mounting base is light and easily controlled with arbitrary azimuth.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: May 22, 2018
    Assignee: XIDIAN UNIVERSITY
    Inventors: Xuechao Duan, Hong Bao, Baoyan Duan, Shufei Feng, Bi Cheng
  • Patent number: 9951418
    Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: April 24, 2018
    Assignee: XIDIAN UNIVERSITY
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Pengfei Deng, Tianmin Lei, Fengqi Zhang
  • Publication number: 20180023751
    Abstract: A mounting base for supporting and rotating an instrument about two perpendicular axes is disclosed. The mounting base includes a vertical column; a rotatable platform attached to the column by a revolute joint; a rail around the column at least one rod, an end of the at least one rod connections with the revolute joint; at least one sliding mechanism, connecting with the other end of the at least one rod, the sliding mechanism sliding on the rail. The mounting base is light and easily controlled with arbitrary azimuth.
    Type: Application
    Filed: July 29, 2016
    Publication date: January 25, 2018
    Applicant: Xidian University
    Inventors: Xuechao Duan, Hong Bao, Baoyan Duan, Shufei Feng, Bi Cheng
  • Patent number: 9851252
    Abstract: A compressive sensing-based multispectral video imager comprises a beamsplitter, a first light channel, a second light channel, and an image reconstruction processor; the beamsplitter is configured to divide the beam of an underlying image into a first light beam and a second light beam; the first light beam enters the first light channel, processed and sampled in the first light channel, to obtain a first mixing spectral image which is transferred to the image reconstruction processor; the second light beam enters the second light channel, processed and sampled in the second light channel, to obtain a second mixing spectral image which is transferred to the image reconstruction processor; the image reconstruction processor is configured to reconstruct the underlying spectral image based on the first mixing spectral image and the second mixing spectral image by using non-linear optimization method.
    Type: Grant
    Filed: June 9, 2013
    Date of Patent: December 26, 2017
    Assignee: Xidian University
    Inventors: Guangming Shi, Lizhi Wang, Danhua Liu, Dahua Gao, Guo Li, Yang Liu
  • Patent number: 9728292
    Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm?3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm?3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm?3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: August 8, 2017
    Assignee: XIDIAN UNIVERSITY
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Yujuan Zhang, Chao Han, Yanqiang Shi
  • Patent number: 9691612
    Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.
    Type: Grant
    Filed: September 3, 2012
    Date of Patent: June 27, 2017
    Assignee: Xidian University
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Pengfei Deng, Tianmin Lei
  • Publication number: 20150153227
    Abstract: A compressive sensing-based multispectral video imager comprises a beamsplitter, a first light channel, a second light channel, and an image reconstruction processor; the beamsplitter is configured to divide the beam of an underlying image into a first light beam and a second light beam; the first light beam enters the first light channel, processed and sampled in the first light channel, to obtain a first mixing spectral image which is transferred to the image reconstruction processor; the second light beam enters the second light channel, processed and sampled in the second light channel, to obtain a second mixing spectral image which is transferred to the image reconstruction processor; the image reconstruction processor is configured to reconstruct the underlying spectral image based on the first mixing spectral image and the second mixing spectral image by using non-linear optimization method.
    Type: Application
    Filed: June 9, 2013
    Publication date: June 4, 2015
    Applicant: XIDIAN UNIVERSITY
    Inventors: Guangming Shi, Lizhi Wang, Danhua Liu, Dahua Gao, Guo Li, Yang Liu
  • Patent number: 9048092
    Abstract: A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C.
    Type: Grant
    Filed: September 3, 2012
    Date of Patent: June 2, 2015
    Assignee: Xidian University
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Pengfei Deng, Tianmin Lei
  • Publication number: 20150119700
    Abstract: A system for the endoscopic X-ray luminescence computed tomographic imaging is provided.
    Type: Application
    Filed: March 16, 2012
    Publication date: April 30, 2015
    Applicant: XIDIAN UNIVERSITY
    Inventors: Jimin Liang, Xueli Chen, Xiaochao Qu, Shouping Zhu, Duofang Chen, Heng Zhao, Jie Tian
  • Publication number: 20140367642
    Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.
    Type: Application
    Filed: September 3, 2012
    Publication date: December 18, 2014
    Applicant: Xidian University
    Inventors: Hui Guo, Keji Zhang, Yuming Zhang, Pengfei Deng, Tianmin Lei