Abstract: A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C. -1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C.

Abstract: A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

Abstract: An optimizing design method for a chassis structure of electronic equipment is disclosed, including: investigating from the point of view of mechanical, electric and thermal three-field coupling, determining the preliminary design size of the chassis, performing a mechanical analysis by using a mechanical analysis software such as ANSYS; converting the mesh model among the three-fields, obtaining the mesh model used for the electromagnetic and thermal analyses; setting the thermal analysis parameters, performing the thermal analysis by using an electromagnetic analysis software such as ICEPAK; determining a resonance frequency of the chassis and an electric parameter of the absorbing material, performing an electromagnetic analysis by using a thermal analysis software such as FEKO; correcting the analysis result by sample testing; determining whether the chassis satisfies the design requirement, if it satisfies the requirement, the optimizing design will be finished, otherwise, modifying the preliminary compu

Abstract: A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Abstract: A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Abstract: An optimizing design method for a chassis structure of electronic equipment is disclosed, including: investigating from the point of view of mechanical, electric and thermal three-field coupling, determining the preliminary design size of the chassis, performing a mechanical analysis by using the software Ansys; converting the mesh model among the three-fields, obtaining the mesh model used for the electromagnetic and thermal analyses; setting the thermal analysis parameters, performing the thermal analysis by using the software IcePak; determining a resonance frequency of the chassis and an electric parameter of the absorbing material, performing an electromagnetic analysis by using the software FeKo; correcting the analysis result by sample testing; determining whether the chassis satisfies the design requirement, if it satisfies the requirement, the optimizing design will be finished, otherwise, modifying the preliminary CAD model, the electromagnetic analysis parameter and the thermal analysis parameter,