Abstract: A semiconductor wafer having an active layer is mounted on a carrier with the active layer away from the carrier and at least partially diced on the carrier from a major surface of the semiconductor wafer. The at least partially diced semiconductor wafer is etched on the carrier from the said major surface with a spontaneous etchant to remove sufficient semiconductor material from a die produced from the at least partially diced semiconductor wafer to improve flexural bend strength of the die by removing at least some defects caused by dicing.

Abstract: A semiconductor is cut by directing a green laser beam of high power, and subsequently directing a UV beam along the cut line. The first beam performs cutting with relatively rough edges and a high material removal rate, and the second beam completes the cut at the edges for the required finish, with a lower material quantity removal.

Abstract: Electronic circuits such as IC packages, circuit boards, of flex circuits are singulated by laser cutting of adjoining laminated material. The laser beam has a wavelength of less than 400 nm, and either a minimum energy density of 100 J/cm2 or a minimum power density of 1GW/cm2. The method avoids the need for cleaning and intermediate handling, and there is a greatly improved throughput.

Abstract: A UV laser beam is used to machine semiconductor. The beams intensity (IB) is chosen so that it lies in a range of such values for which there is an increasing (preferably linear) material removal rate for increasing IB An elongate formation such as a trough or a slot is machined in n scans laterally offset (O_centre), for each value of z-integer in the z direction.