Abstract: A method is provided of processing substrate holder material for a substrate holder on which on a first side of said substrate holder a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate using induction heating. The method includes the operations of determining a first electrical resistivity at at least one measuring position on said substrate holder material, comparing said first electrical resistivity with a second reference electrical resistivity and adapting said substrate holder material in correspondence with said comparison. Also a substrate holder is provided which is processes by such a method.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterized in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: A method is provided of processing substrate holder material for a substrate holder on which on a first side of said substrate holder a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate using induction heating. The method includes the operations of determining a first electrical resistivity at at least one measuring position on said substrate holder material, comparing said first electrical resistivity with a second reference electrical resistivity and adapting said substrate holder material in correspondence with said comparison. Also a substrate holder is provided which is processes by such a method.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterised in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: The invention relates to a support assembly for a substrate holder on which a semiconductor substrate is to be placed for layered deposition of various semiconductor materials on the semiconductor substrate, said support assembly comprising: at least one vertically disposed, rotatably drivable support shaft, as well as a substrate holder support supporting the substrate holder, which is to be placed on the free end of said support shaft, as well as fixation means are arranged for fixing the support shaft and the substrate holder support in position relative to each other.

Abstract: The invention relates to a method for the treatment of a surface of a silicon carbide (SiC) substrate, said substrate being used in semiconductor manufacturing processes. The invention also relates to a SiC substrate for use in semiconductor manufacturing processes treated with the method according to the invention. According to the invention, said method comprising the steps of selective etching the surface of said SiC substrate using a reactive gas mixture, thereby creating a carbon surface layer on said substrate, and removing said carbon surface layer being created on said substrate. Thus, with the method steps according to the invention, SiC substrates can be obtained with a surface structure that complies with the highest standards as regard to dimensions and purity as required in semiconductor manufacturing processes.

Abstract: The invention to a device (10) for supporting a substrate during the manufacture of semiconductor components, comprising a substantially flat plate with an upper surface (11) on which the substrate can be positioned. The invention also relates to a method for manufacturing such a device (10). The object of the invention is to provide a device (10) according to the preamble, which is of inexpensive and simple construction but which also allows the passage of a process gas in the direction of the substrate under certain manufacturing conditions, for example for supplying a protective gas to the substrate or having the substrate rest on an air cushion. According to the invention, the upper surface (11) of the plate is at least partially porous (14). Thus, costly and extremely precise machining of the device (10), as usually required in the current state of the art, is unnecessary, thereby making it possible to manufacture the device (10) at much lower cost.

Abstract: The invention relates to a method for the treatment of a surface of a metal-carbide substrate, said metal-carbide substrate being used in semiconductor manufacturing processes. The invention also relates to a metal-carbide substrate for use in semiconductor manufacturing processes treated with to the method according to the invention. According to the invention said method comprising the steps of selective etching the surface of said metal-carbide substrate using a reactive gas mixture thereby creating a carbon surface layer on said metal-carbide substrate, and removing said carbon surface layer being created on said metal-carbide substrate. Thus with the method steps according to the invention metal-carbide substrates can be obtained with a surface structure that complies with the highest standards as regard to dimensions and purity as required in semiconductor manufacturing processes.