Abstract: Disclosed is a manufacturing method for forming a FET on a glass substrate at low temperatures. A polycrystalline silicon layer 2 is formed on a glass substrate 1, germanium layers 11, 12 are formed on the polycrystalline silicon layer in regions that are to become a source and a drain, ions serving as a dopant are implanted into at least the germanium layers, and annealing is subsequently applied to thereby cause the implanted dopant to diffuse into the polycrystalline. silicon layer, form a source region S and a drain region D and crystallize the germanium layers. Alternatively, the dopant is implanted also into the polycrystalline silicon layer at such a dosage that will not cause the polycrystalline silicon layer to become amorphous. Annealing for crystallizing the germanium is subsequently carried out. Annealing may be performed in the neighborhood of 500° C.

Abstract: A photochromic device having a photochromic layer including a photochromic material which exhibits absorbance in a visible region upon being sensitized by a light having a wavelength of not less than 700 nm, and an ultraviolet light blocking device for blocking an ultraviolet light from sensitizing the photochromic material in the photochromic layer. The ultraviolet light blocking device includes at least one of an ultraviolet shielding layer positioned to shield the photochromic layer from the ultraviolet light and an ultraviolet light absorber included in the photochromic layer.

Abstract: Ionization efficiency is improved in Penning ionization capable of selective ionization. A metastable excited species of a rare gas is produced by introducing the rare gas into an ionization space and inducing an electrical discharge, a sample gas is introduced into the ionization space and Penning ionization is produced owing to collision between the sample gas and the metastable excited species of the rare gas. Electrons released from atoms or molecules positively ionized by Penning ionization are captured by applying a positive potential to an electron-capture electrode placed in the ionization space, and the atoms or molecules positively ionized are guided to a mass analyzer.

Abstract: A photochromic device having a photochromic layer including a photochromic material which exhibits absorbance in a visible region upon being sensitized by a light having a wavelength of not less than 700 nm, and an ultraviolet light blocking device for blocking an ultraviolet light from sensitizing the photochromic material in the photochromic layer. The ultraviolet light blocking device includes at least one of an ultraviolet shielding layer positioned to shield the photochromic layer from the ultraviolet light and an ultraviolet light absorber included in the photochromic layer.

Abstract: A photochromic display element comprising a photochromic layer 12 containing a 4,4′-bipyridine derivative as a photochromic compound intervined between a transparent substrate 11 placed at a front surface side and a substrate 13 placed at a rear surface side. When a light containing an infrared light having a wavelength of 830 nm is irradiated, the photochromic display element exhibits the absorbance spectrum within a visible light region is reversibly changed whereby the photochromic layer 12 is colored and bleached.