Patents Assigned to YANGTZE MEMORY TECHNOLOGIES., LTD.
  • Publication number: 20240087654
    Abstract: The present disclosure provides a method for controlling a 3D NAND memory using a read operation. The method can include increasing a voltage to a plurality of top select gates, with respect to a first reference voltage level, during a pre-pulse period of the read operation prior to a read period of the read operation. The method can also include increasing a voltage to a plurality of word lines, with respect to a second reference voltage level, during the pre-pulse period. The method can also include decreasing a voltage to a bit line, with respect to the first voltage, during the pre-pulse period. The method can also include applying no voltage change to a bottom select gate during the pre-pulse period.
    Type: Application
    Filed: September 13, 2022
    Publication date: March 14, 2024
    Applicant: YANGTZE MEMORY TECHNOLOGIES., LTD.
    Inventors: Zhipeng DONG, Ke Liang, Liang Qiao