Patents Assigned to YANSHAN UNIVERSITY
  • Patent number: 10249418
    Abstract: A permanent magnet material and a method thereof. The permanent magnet material comprises one or more rare earth elements and one or more transition metal elements, wherein the atomic percentage of the one or more rare earth elements is less than or equal to 13%, and the permanent magnet material has a maximum magnetic energy product of greater than or equal to 18 MGOe.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: April 2, 2019
    Assignee: YANSHAN UNIVERSITY
    Inventors: Xiangyi Zhang, Xiaohong Li, Wenpeng Song, Guangwei Huang, Li Lou, Fuchen Hou, Qian Zhang
  • Publication number: 20180174722
    Abstract: A permanent magnet material and a method thereof. The permanent magnet material comprises one or more rare earth elements and one or more transition metal elements, wherein the atomic percentage of the one or more rare earth elements is less than or equal to 13%, and the permanent magnet material has a maximum magnetic energy product of greater than or equal to 18 MGOe.
    Type: Application
    Filed: September 9, 2016
    Publication date: June 21, 2018
    Applicant: YANSHAN UNIVERSITY
    Inventors: Xiangyi ZHANG, Xiaohong LI, Wenpeng SONG, Guangwei HUANG, Li LOU, Fuchen HOU, Qian ZHANG
  • Patent number: 9422161
    Abstract: The invention relates to an ultrahard nanotwinned boron nitride bulk material and synthetic method thereof. Particularly, the invention discloses a nanocrystalline cubic boron nitride bulk material containing high density of twins and synthetic method thereof, in which a nanotwinned boron nitride bulk are synthesized from nanospherical boron nitride particles (preferably with a size of 5-70 nm) with onion-like structure as raw materials by using high temperature and high pressure synthesis. As compared with the prior arts, the nanotwinned boron nitride bulk obtained according to the invention has a much higher hardness than that of a normal cubic boron nitride single crystal. The nanotwinned boron nitride bulk has great prospects in applications, such as precision and ultra-precision machining, abrasives, drawing dies, and special optics as well as other fields.
    Type: Grant
    Filed: August 2, 2013
    Date of Patent: August 23, 2016
    Assignee: YANSHAN UNIVERSITY
    Inventors: Yongjun Tian, Dongli Yu, Bo Xu, Julong He, Zhongyuan Liu, Wentao Hu, Kun Luo, Yufei Gao, Zhisheng Zhao
  • Publication number: 20150158727
    Abstract: The invention relates to an ultrahard nanotwinned boron nitride bulk material and synthetic method thereof. Particularly, the invention discloses a nanocrystalline cubic boron nitride bulk material containing high density of twins and synthetic method thereof, in which a nanotwinned boron nitride bulk are synthesized from nanospherical boron nitride particles (preferably with a size of 5-70 nm) with onion-like structure as raw materials by using high temperature and high pressure synthesis. As compared with the prior arts, the nanotwinned boron nitride bulk obtained according to the invention has a much higher hardness than that of a normal cubic boron nitride single crystal. The nanotwinned boron nitride bulk has great prospects in applications, such as precision and ultra-precision machining, abrasives, drawing dies, and special optics as well as other fields.
    Type: Application
    Filed: August 2, 2013
    Publication date: June 11, 2015
    Applicant: YANSHAN UNIVERSITY
    Inventors: Yongjun Tian, Dongli Yu, Bo Xu, Julong He, Zhongyuan Liu, Wentao Hu, Kun Luo, Yufei Gao, Zhisheng Zhao
  • Publication number: 20100295202
    Abstract: The present invention provides a method for the fabrication of high performance densified nanocrystalline bulk thermoelectric material, comprising: (1) preparing a thermoelectric alloy nanopowders by a ball milling process to achieve an average crystal size of 5-30 nm, and (2) preparing the nanocrystalline bulk thermoelectric material by high pressure sintering at a temperature of 0.25-0.8 Tm under a pressure of 0.8-6.0 GPa for 10-120 minutes, to achieve a relative density of 90-100% and an average grain size of 10-50 nm. The method is easy to operate and allows the production of a thermoelectric material with a ZT value higher than 2. In addition, the method can ensure both good thermoelectric properties and high density, and therefore have important applications for energy industry.
    Type: Application
    Filed: August 14, 2009
    Publication date: November 25, 2010
    Applicant: YANSHAN UNIVERSITY
    Inventors: Yongjun Tian, Fengrong Yu, Dongli Yu, Jianjun Zhang, Bo Xu, Zhongyuan Liu, Julong He