Abstract: A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11-mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

Abstract: An electromagnetic wave absorber (4) of a material that causes a large dielectric or magnetic loss is disposed so as to surround a region between a high-frequency wave transmitting window (3) and an antenna (32) to suppress the formation of a sanding wave by suppressing the reflection of microwaves.

Abstract: A plasma processing apparatus includes a processing container 53 whose interior has a mount table 10, a glass plate 8 for covering an upper opening of the processing container 53, a microwave supplier 50, a coaxial waveguide 52 having its end connected with the microwave supplier 50 to have an inner conductor 52B and an outer conductor 52A, a radial waveguide box 54 connected to the other end of the outer conductor 52A of the coaxial waveguide 52 and formed to expand from the other end of the outer conductor 52A outward in the radial direction and subsequently extend downward, a disc-shaped antenna member 60 for covering a lower opening of the radial waveguide box 54, the antenna member 60 having its central part connected with the other end of the inner conductor 52B, and a metallic reflector 64 arranged on the opposite side of the antenna member's part connected with the inner conductor 52B, for reflecting ah electric field reflected by an inner wall of the processing container 4.

Abstract: A plasma processing apparatus includes a processing container 53, a mounting table 61 for supporting a semiconductor wafer W arranged in the processing container 53, an endless-and-annular antenna 73 attached to a sealing plate 55 opposing the wafer W to introduce a microwave into the container 53 through the plate 55, a propagation waveguide 81 connected to the annular antenna 73 to supply the microwave to the antenna 73, and a microwave supplier 83 connected to the propagation waveguide 81 to supply the microwave to the waveguide 81. In arrangement, the annular antenna 73 is arranged so that its part along the sealing plate 55 accords with an antinode of a standing wave of the microwave, producing an uniform plasma in the processing container 53.