Abstract: A thin film transistor (TFT) array substrate includes a first substrate, a plurality of TFTs formed on the first substrate, a color filter layer covered on the TFTs, and a plurality of pixel electrodes corresponding to the TFTs. The color filter layer is directly formed on the TFTs. The color filter layer includes a plurality of photoresist units. Each of the pixel electrodes is to electrically connected to a drain of the TFT via an opening.

Abstract: A method for forming a TFT includes providing a substrate, a gate electrode on the substrate, an electrically insulating layer on the substrate to totally cover the gate electrode, a channel layer on the electrically insulating layer, a first photoresist pattern on the channel layer, a metal layer on the electrically insulating layer, the channel layer and the first photoresist layer, and a second photoresist pattern on the metal layer. A middle portion of the metal layer is then removed to form a source electrode and a drain electrode and to expose the first photoresist pattern and a portion of the channel layer between the first and second photoresist patterns. The exposed portion of the channel layer is then processed to have its electrical conductivity be lowered to thereby reduce a hot-carrier effect of the channel layer.

Abstract: A display panel manufacturing method includes forming a gate electrode on a substrate and a gate insulator, a semiconductor layer, and an etch stop layer covering the gate electrode. A photoresist layer covering on the etch stop layer is pattern from two opposite side of the substrate by two photolithography processes to form a photoresist pattern. The etch stop layer is dry etched to form an etch stop pattern via the photoresist pattern. The photoresist pattern is formed again by two photolithography processes. The semiconductor layer is wet etched to form a semiconductor pattern via the photoresist pattern. A source electrode and a drain electrode is formed corresponding to two opposite sides of the gate electrode to orderly cover the etch pattern, the semiconductor pattern, and the gate insulator.

Abstract: A thin film transistor (TFT) includes a gate, a drain, a source, an insulating layer, a metal oxide layer, and an etch stopper layer. The metal oxide layer includes a source area, a drain area, and a channel area. The source is electrically coupled to the source area and the drain is electrically coupled to the drain area. Oxygen ions are implanted into the channel area via a surface treatment process to make an oxygen concentration of the channel area be greater than an oxygen concentration of each of the source area and the drain area.

Abstract: The present invention provides an image compensating device for a joint display. The image compensating device includes a light incident surface, a parallel light emitting surface, and a plurality of light guiding channels extending from the light incident surface to the light emitting surface. The light emitting surface of image compensating device is greater than the light incident surface. The section area of each light guiding channel is gradually increased from the light incident surface to the light emitting surface, by which to extend the image provided by the peripheral region of each cell of the joint display and provide a seamless joint image.

Abstract: An organic light emitting diode (OLED) package includes a substrate, an OLED die mounted on the substrate and an encapsulation layer encapsulating the OLED die. The OLED package further includes a protecting layer formed on the OLED die. The encapsulation layer has a multi-layered structure and is deposited on the protecting layer. Refractive indexes of a cathode of the OLED die, the protecting layer and the encapsulation layer are gradually decreased in the sequence. A barrier layer for blocking moisture from entering the OLED package is formed on a bottom surface of the substrate by atomic layer deposition (ALD) method. The present disclosure also provides a method for manufacturing the OLED package.

Abstract: A method manufactures a color filter including a transparent substrate, a black matrix and a resin layer having at least two colors of resin patterns. During an exposing process of the color filter, a particular photo mask is used to expose from a side of the transparent substrate adjacent to the black matrix. At a same time, the transparent substrate is exposed from another side of the transparent away from the black matrix without using the photomask.

Abstract: A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.

Abstract: Method for manufacturing a thin film transistor liquid crystal display is provided. A substrate is provided. A gate electrode, a source electrode, a drain electrode, and a passivation film are formed on the substrate in sequence. The passivation film has a contact hole to expose a part of the drain electrode. A conductive layer is formed by coating nano metal material on the passivation film and in the contract hole from which the drain electrode is exposed. A pixel electrode is formed by patterning the conductive layer.

Abstract: A method manufactures a color filter including a transparent substrate, a black matrix and a resin layer having at least two colors of resin patterns. During an exposing process of the color filter, a particular photo mask is used to expose from a side of the transparent substrate adjacent to the black matrix. At a same time, the transparent substrate is exposed from another side of the transparent away from the black matrix without using the photomask.

Abstract: An OLED panel includes a plurality of pixels. Each pixel includes a first sub-pixel, a second sub-pixel and a third sub-pixel spaced from each other by a plurality of baffle plates. The first sub-pixel of each pixel is located adjacent to that of a neighboring pixel. The first sub-pixel of each pixel is spaced from that of the neighboring pixel by a partition plate. The partition plate has a height less than a height of each baffle plate.

Abstract: A manufacturing method of a thin film transistor includes hard-baking and etching processes for a stop layer. Two through holes are exposed and developed in a photoresistor layer, in which a distance between the two through holes is substantially equal to the channel length of the thin film transistor. Further, the etching stop layer is dry-etched to obtain the thin film transistor having an expected channel length.

Abstract: An organic light emitting diode (OLED) package includes a substrate, an OLED die mounted on the substrate and an encapsulation layer encapsulating the OLED die. The OLED package further includes a protecting layer formed on the OLED die. The encapsulation layer has a multi-layered structure and is deposited on the protecting layer. Refractive indexes of a cathode of the OLED die, the protecting layer and the encapsulation layer are gradually decreased in the sequence. A barrier layer for blocking moisture from entering the OLED package is formed on a bottom surface of the substrate by atomic layer deposition (ALD) method. The present disclosure also provides a method for manufacturing the OLED package.

Abstract: An OLED display panel includes a plurality of spaced first pixels and a plurality of spaced second pixels arranged in rows and columns. Each of the first pixels includes a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel, the second sub-pixel and the third sub-pixel of each first pixel are substantially parallel to and spaced from each other. Each of the second pixels includes a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel, the second sub-pixel and the third sub-pixel of each second pixel are substantially parallel to and spaced from each other.

Abstract: An OLED display panel includes a plurality of spaced first pixels and a plurality of spaced second pixels spaced from each other. Each of the first pixel and the second pixel includes a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel, the second sub-pixel and the third sub-pixel are parallel to and spaced from each other. The first pixels and the second pixels are arranged in alternate pattern in one row. Of one first pixel and adjacent two second pixels of one row, the first sub-pixel of the first pixel is aligned with the first sub-pixel of the one second pixel, and the third sub-pixel of the first pixel is aligned with the third sub-pixel of the other one second pixel.

Abstract: An organic light emitting diode (OLED) display panel includes a plurality of pixels spaced from each other. Each of the pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The first sub-pixel, the second sub-pixel, and the third sub-pixel of each pixel are all rhombus shaped. The first sub-pixel, the second sub-pixel, and the third sub-pixel spaced from each other by three barriers. The three barriers are connected with each other in a Y-shaped pattern. An angle defined by two adjacent barriers is about 120 degrees.

Abstract: A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.

Abstract: An electronic device includes a fingerprint sensor used for controlling the electronic device to perform predetermined functions. A plurality of reference fingerprints and a plurality of functions corresponding to the reference fingerprints are set, where each reference fingerprint corresponds to a function. When a fingerprint matches one of the reference fingerprints is input upon the condition that the electronic device is in the locked state, the electronic device performs a function corresponding to the reference fingerprint that matches the input fingerprint. A plurality of predetermined operation objects corresponding to the reference fingerprints are set, where each of the reference fingerprints corresponds to a respective predetermined operation object.

Abstract: A touch display panel includes an LCD panel and a touch structure formed on the LCD panel. The LCD panel includes a first substrate, a second substrate and a liquid crystal layer formed between the first substrate and the second substrate. A color filter is formed on a bottom surface of the first substrate adjacent to the liquid crystal layer. A touch structure is formed on the LCD panel. The touch structure includes a first transparent ITO film. The first transparent ITO film defines a plurality of channels thereon. A photo etching barrier layer is formed between the first transparent ITO film and the color filter. The photo etching barrier layer is configured to prevent the channels from extending to the color filter and the liquid crystal layer.

Abstract: An OLED panel includes a plurality of pixels. Each pixel includes a first sub-pixel, a second sub-pixel and a third sub-pixel spaced from each other by a plurality of baffle plates. The first sub-pixel of each pixel is located adjacent to that of a neighboring pixel. The first sub-pixel of each pixel is spaced from that of the neighboring pixel by a partition plate. The partition plate has a height less than a height of each baffle plate.