Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

Abstract: A composition for coating a photoresist pattern which comprises water and a compound of Formula 1 is coated on a previously formed photoresist pattern, thereby reducing a size of a space or contact hole of photoresist pattern effectively. The method using the composition is applied to all semiconductor processes for forming a fine photoresist pattern. wherein R1 and R2 are individually selected from the group consisting of H, linear or branched C1-C20 alkyl, linear or branched C2-C20 alkyl containing an ester linkage, linear or branched C2-C20 alkyl containing a ketone linkage, linear or branched C2-C20 alkyl containing a carboxylic acid group, linear or branched C7-C20 alkyl phenyl and linear or branched C3-C20 alkyl containing a acetal linkage; m is an integer ranging from 0 to 3000; and n is an integer ranging from 10 to 3000.