Abstract: The present invention relates to the apparatus and method for optical interconnection. The present invention provides an optical interconnection structure comprising: a substrate on which double side perforated multi-hole through a predetermined region is formed; bottom hole which is etched and tapered for optical fiber array is bigger than upper hole which is etched for the optical devices. The present invention provides the optical interconnection structure that can facilitate the optical interconnection between the active optoelectronic devices that transmit/receive the optical signals and the optical fiber array, making it possible to align easily and acutely between the optical devices and optical fiber array.

Abstract: Provided is a multi-wavelength laser diode module including a plurality of laser diodes having different consecutive light emission wavelength regions, a plurality of filters respectively corresponding to the plurality of laser diodes, and an optical waveguide path that transmits light emitted from the plurality of laser diodes to the plurality of filters and collects light reflected or transmitted by the plurality of filters to transmit the collected light to the outside.

Abstract: A wavelength-tunable laser system includes an optical fiber collimator array having at least two ports, an optical amplifier connected to one port of an optical fiber, an optical coupler for coupling light incident from the optical amplifier and transmitting the coupled light to another port, a diffraction grating plate for guiding each wavelength component of light incident from the optical fiber collimator array in a different direction, and an Opto-Very Large Scale Integration (Opto-VLSI) processor.

Abstract: The present invention relates to a wavelength conversion laser system and provides a wavelength conversion laser system including a semiconductor optical amplifier, an optical condenser that condenses light emitted from the optical amplifier, a diffraction grating plate that induces wavelength components of the light having passed through the optical condenser in different directions, and an optical very large scale integration (VLSI) processor.

Abstract: The present invention provides an optical connection component which comprises a solid state laser component for emitting a modulated beam of light in response to an applied electrical signal. The optical connection component also comprises an optical lens positioned relative to the solid state laser component at a predetermined position in which the optical lens reduces divergence of the emitted beam of light. The optical lens is formed at the predetermined position in a manner such that the optical lens is immobile relative to the solid state laser component. The optical connection component further comprises an optical waveguide having a core for guiding the light. The optical waveguide has first and second end-portions. The first end-portion is positioned for coupling the modulated light from the optical lens into the core.

Abstract: A wavelength-tunable laser system includes an optical fiber collimator array having at least two ports, an optical amplifier connected to one port of an optical fiber, an optical coupler for coupling light incident from the optical amplifier and transmitting the coupled light to another port, a diffraction grating plate for guiding each wavelength component of light incident from the optical fiber collimator array in a different direction, and an Opto-Very Large Scale Integration (Opto-VLSI) processor.

Abstract: Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and removing a lateral surface of the compound semiconductor layer to form a roughly hemispheric lens. The lateral surface of the compound semiconductor layer is removed by a digital alloy method. In particular, the lateral surface of the compound semiconductor layer is removed by a wet etching process.