Abstract: Apparatus and other embodiments associated with high speed and high breakdown voltage rectifier are disclosed. A Junction All Around structure, where a deep trench structure surrounds and encloses a P-N junction or a MOS structure, is created and applied in various rectifiers. In one embodiment, multiple deep trenches in ring shape enclosed a vertical P-N junction. For each deep trench, a corresponding wider ring-shape P+ region is created on top of a N? epi layer. This enclosed deep trench surrounding a vertical P-N junction and a thinner N? epitaxial layer allow higher reverse bias voltage and low leakage current. In another embodiment, an enclosed deep trench in ring shape surrounds a horizontal P-N junction, which results in a planar N-channel MOS during forward bias. The structure can be extended to multiple deep trenches with associated horizontal P-N junctions.

Abstract: Apparatus, methods and other embodiments associated with a high speed and high breakdown voltage Schottky rectifier are disclosed. In one embodiment, the Schottky rectifier has three layers of N-type semiconductor, a first layer of highly doped N-type substrate at the bottom, a second layer of lightly doped epitaxial N-type material above the first layer, and a third layer of very low doping concentration N-type material created by converting the top shallow portion of the second layer without turning into P-type. The Schottky device further includes an enclosed deep trench structure close to the bottom of the second layer and can sustain high reverse bias voltage up to 2,000 volt.