Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize a curable bonding agent, removable wire spacers, and a series removable protective glass end plates. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize reflective sheet material. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The present invention is a creation of advanced scintillation materials having emission maximum in the range of about 400-450 nm and based on cerium doped a rare-earth oxyorthosilicate including LFS, LSO, LYSO, LGSO, GSO crystals having defects in comparison with ideal crystal structure, and said defects change the optical transmission and absorption spectra in the range about of 200-340 nm. The picks of maximum absorptions characterised in that the ratio of A(?1=250-270 nm)/A(?3=280-300 nm)?1, A(?2=280-300)/A(?3=340-380)?1, A(?1=250-270)/A(?2=280-300 nm)>1.

Abstract: The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Abstract: A novel method of making a crystal block array (configured for coupling with photodetectors as part of an integrated detector module useful in advanced PET scanner systems) is disclosed herein. The novel method comprises a series of cutting, polishing, and assembling steps that utilize a curable bonding agent, removable wire spacers, and a series removable protective glass end plates. The crystal block arrays disclosed herein may be of various dimensions and geometries and are amenable to mass production.

Abstract: The present invention relates to a set of multi-doped cerium-activated scintillation materials of the solid solutions on the basis of the rare earth silicate, comprising lutetium and having compositions represented by the chemical formulas: (Lu2?w?x+2yAwCexSi1?y)1?zMexJjOq and (Lu2?w?x?2yAwCexSi1+y)1?zMezJjOq. The invention is useful for detection of elementary particles and nuclei in high-energy physics, nuclear industry; medicine, Positron Emission Tomography (TOF PET and DOI PET scanners) and Single Photon Emission Computed Tomography (SPECT), Positron Emission Tomography with Magnetic Resonance imaging (PET/MR); X-ray computer fluorography; non-destructive testing of solid state structure, including airport security systems, the Gamma-ray systems for the inspection of trucks and cargo containers.