Patents Assigned to Zena Technologies, Inc.
  • Publication number: 20150214261
    Abstract: An optical apparatus, including an optical filter comprising an array of nanowires oriented perpendicular to a light incidence surface of the filter, wherein the optical filter transmits light at a first wavelength that is incident on the incidence surface, wherein the first wavelength is based on a cross-sectional shape of the nanowires. The nanowires are created using a single lithography step. An imaging device and a method of fabricating the same, the device including an array of nanowires formed on a substrate, wherein at least one nanowire in the array of nanowires includes a photoelectric element to produce a photocurrent based, at least in part, on incident photons absorbed by the at least one nanowire.
    Type: Application
    Filed: August 12, 2013
    Publication date: July 30, 2015
    Applicants: President and Fellows of Harvard College, Zena Technologies, Inc.
    Inventors: Hyunsung Park, Yaping Dan, Kwanyong Seo, Young June Yu, Peter Duane, Munib Wober, Kenneth B. Crozier
  • Patent number: 9000353
    Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.
    Type: Grant
    Filed: October 22, 2010
    Date of Patent: April 7, 2015
    Assignees: President and Fellows of Harvard College, Zena Technologies, Inc.
    Inventors: Kwanyong Seo, Munib Wober, Paul Steinvurzel, Ethan Schonbrun, Yaping Dan, Kenneth B. Crozier
  • Publication number: 20150041937
    Abstract: Color filter array devices and methods of making color filter array devices are disclosed herein. A color filter array may include a substrate having a plurality of pixels thereon, one or more nanowires associated with each of the plurality of pixels, wherein each of the one or more nanowires extends substantially perpendicularly from the substrate, and an optical coupler associated with each of the one or more nanowires. A method of making a color filter array may include, making an array of nanowires, wherein each of the nanowires extend substantially perpendicularly from a substrate, disposing a transparent polymer material to substantially encapsulate the nanowires, removing the nanowires from the substrate, providing a pixel array comprising a plurality of pixels, wherein a hard polymer substantially covers an image plane of the pixel array, disposing the array of nanowires on the pixel array, and removing the transparent polymer encapsulating the nanowires.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 12, 2015
    Applicant: Zena Technologies, Inc.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8890271
    Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 18, 2014
    Assignees: Zena Technologies, Inc., President and Fellows of Harvard College
    Inventors: Turgut Tut, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
  • Patent number: 8889455
    Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: November 18, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Peter Duane, Young-June Yu, Munib Wober
  • Patent number: 8866065
    Abstract: Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: October 21, 2014
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8835831
    Abstract: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: September 16, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8835905
    Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: September 16, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Munib Wober, Young-June Yu
  • Patent number: 8810808
    Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: August 19, 2014
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8791470
    Abstract: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: July 29, 2014
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8766272
    Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: July 1, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8754359
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: June 17, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8748799
    Abstract: An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: June 10, 2014
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8735797
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: May 27, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8710488
    Abstract: A first exemplary device has a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The first exemplary device may further have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. A second exemplary device has a substrate, a nanowire and one or more photogates surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The second exemplary device may have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. The one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 29, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140054661
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: October 31, 2013
    Publication date: February 27, 2014
    Applicant: Zena Technologies, Inc.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8546742
    Abstract: An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: October 1, 2013
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8519379
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: August 27, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8514411
    Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: August 20, 2013
    Assignee: Zena Technologies, Inc.
    Inventor: Munib Wober
  • Patent number: 8507840
    Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: August 13, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Peter Duane, Munib Wober