Abstract: The present invention produces a low-cost reliable non-volatile memory with multiple write cycles. The memory circuit trades full configurability for increased reliability and decreased cost by providing a limited number of write or rewrite cycles utilizing an indirectly accessible register set that writes data into fully configurable memory. The circuit is useful for both providing upgrade capability to electronic computational systems and data robustness to logic storage systems. Less configurable non-volatile memory (NVM) block 201 is utilized in tandem with directly accessible fully configurable memory block 207. Arbiter 206 implements the redundant addressing that enables the multiple write cycle NVM functionality. Each block of less configurable memory contains an address segment 203 and a data segment 204. Address segment 203 refers to a specific cell in directly accessible memory 209.

Abstract: A biasing scheme for compensating for a difference in biasing currents between a first circuit element (10) and second circuit element (32) in a stacked circuit configuration. A current-difference source (38) generates a difference current that is substantially equal to the difference between the biasing currents of the first circuit element (10) and second circuit element (32) in order to compensate for process, temperature and supply variations.

Abstract: A frequency synthesizer (50, 70) including an edge-detection circuit (51, 60) for disabling elements of the frequency synthesizer (50, 70) prior to start-up. The edge-detection circuit detects a transition edge of a reference-clock signal (ref_clk) of the frequency synthesizer (50, 70) and enables elements of the frequency synthesizer (50, 70) upon the detection of the transition edge.