Patents Assigned to Zetta Research and Development LLC—AQT Series
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Patent number: 9390917Abstract: In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.Type: GrantFiled: February 21, 2012Date of Patent: July 12, 2016Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Vardaan Chawla, Mariana Rodica Munteanu
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Patent number: 9263623Abstract: Methods are described for depositing thin films, such as those used in forming a photovoltaic cell or device. In particular embodiments, one or more layers are deposited on a substrate by plasma spraying over the substrate. A grain size of grains in each of the one or more layers is at least approximately two times greater than a thickness of the respective layer. Accordingly, large flat-grained structures are formed in each respective layer, and grain boundaries within each respective layer can be minimized.Type: GrantFiled: December 15, 2014Date of Patent: February 16, 2016Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Brian Josef Bartholomeusz, Michael Bartholomeusz
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Patent number: 9238861Abstract: In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.Type: GrantFiled: May 9, 2012Date of Patent: January 19, 2016Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla
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Patent number: 9157153Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.Type: GrantFiled: May 9, 2012Date of Patent: October 13, 2015Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Mariana Rodica Munteanu, Amith Kumar Murali, Brian Josef Bartholomeusz, Vardaan Chawla
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Patent number: 9123844Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.Type: GrantFiled: April 22, 2013Date of Patent: September 1, 2015Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Mariana R. Munteanu, Erol Girt
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Patent number: 9103000Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.Type: GrantFiled: November 23, 2010Date of Patent: August 11, 2015Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIESInventors: Mariana Munteanu, Brian Josef Bartholomeusz, Michael Bartholomeusz, Erol Girt
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Patent number: 8993370Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.Type: GrantFiled: April 20, 2012Date of Patent: March 31, 2015Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana Rodica Munteanu, Amith Kumar Murali, Kirk Hayes, Brian Josef Bartholomeusz
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Patent number: 8981211Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.Type: GrantFiled: March 17, 2009Date of Patent: March 17, 2015Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Erol Girt, Mariana Rodica Munteanu
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Patent number: 8969719Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).Type: GrantFiled: December 18, 2009Date of Patent: March 3, 2015Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana Rodica Munteanu, Erol Girt
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Patent number: 8709856Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.Type: GrantFiled: March 4, 2010Date of Patent: April 29, 2014Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Brian Josef Bartholomeusz, Michael Bartholomeusz
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Patent number: 8426722Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.Type: GrantFiled: October 24, 2007Date of Patent: April 23, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana R. Munteanu, Erol Girt
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Patent number: 8410004Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.Type: GrantFiled: April 10, 2012Date of Patent: April 2, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Erol Girt, Mariana Rodica Munteanu
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Patent number: 8373060Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.Type: GrantFiled: October 24, 2007Date of Patent: February 12, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana R. Munteanu, Erol Girt