Patents Assigned to Zhejiang Jingsheng M & E Co., Ltd.
  • Patent number: 11821690
    Abstract: The present disclosure relates to a single crystal furnace, which includes a main furnace body, an accessory furnace body, a furnace cover, and a driving component. The accessory furnace body is provided with a first connecting member. The furnace cover is provided with a second connecting member. The driving component can drive the first connecting member or the second connecting member to move, so as to match the first connecting member with the second connecting member, and connect the accessory furnace body with the furnace cover.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: November 21, 2023
    Assignee: ZHEJIANG JINGSHENG M & E CO., LTD
    Inventors: Jianwei Cao, Liang Zhu, Linjian Fu, Gangfei Ye, Junfu Ni
  • Patent number: 10138573
    Abstract: The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: November 27, 2018
    Assignee: ZHEJIANG JINGSHENG M & E CO., LTD
    Inventors: Linjian Fu, Penggen Ouyang, Dantao Wang, Mingjie Chen, Gang Shi, Jianwei Cao, Minxiu Qiu, Qingliang Jiang
  • Patent number: 9797062
    Abstract: The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: October 24, 2017
    Assignee: ZHEJIANG JINGSHENG M & E CO., LTD
    Inventors: Jianwei Cao, Penggen Ouyang, Dantao Wang, Linjian Fu, Mingjie Chen, Gang Shi, Minxiu Qiu
  • Publication number: 20160115619
    Abstract: The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.
    Type: Application
    Filed: May 16, 2013
    Publication date: April 28, 2016
    Applicant: Zhejiang Jingsheng M & E Co., Ltd.
    Inventors: Jianwei CAO, Penggen OUYANG, Dantao WANG, Linjian FU, Mingjie CHEN, Gang SHI, Minxiu QIU