Abstract: The present invention discloses a hysteresis signal detection circuit, comprising: a first MOS transistor, a second MOS transistor, an inverter INV1, an inverter INV2 and an inverter INV3. A gate of the first MOS transistor is connected with an input end, and a drain of the first MOS transistor is connected with an output end through the inverter INV1, the inverter INV2 and the inverter INV3 successively; a source of the first MOS transistor is connected with a drain of the second MOS transistor, and a gate of the second MOS transistor is connected between the inverter INV1 and the inverter INV2; and a resistor R1 is connected between a source and the drain of the second MOS transistor. In the present invention, not only the hysteresis voltage can be adjusted through current and resistance values, which is flexible, but also the hysteresis voltage may not change with power voltage.

Abstract: The present invention discloses a memristor array, comprising metal wires and memristors; the metal wires are arranged laterally and vertically; a memristor is arranged at the intersection of every two metal wires; the connection/disconnection of the metal wires is judged according to the resistance values of the memristors; and an adder is constituted according to the resistance value states of the memristors. The present invention provides a memristor-CMOS hybrid multiplication core circuit, in which one input of multiplication can be stored in a memristor network, one part of operation is completed in a memory network, the other part of operation is completed through a CMOS circuit, thereby reducing frequent data calls by half, and the power consumption of the CMOS circuit is further reduced by reducing competitive adventure in the operation process, thereby greatly reducing the overall energy consumption.