Abstract: A device for diagnosing a fault in a bearing of a motor is provided. If the device operates in a fault diagnosis mode, a current signal acquisition unit acquires a real-time current signal of the motor, a residual signal acquisition unit extracts harmonic signals from the real-time current signal of the motor acquired by the current signal acquisition unit and remove a fundamental signal and a harmonic signal from the real-time current signal of the motor to acquire a residual signal, a fault feature extraction unit analyzes the residual signal in both time domain and frequency domain to extract a fault feature index of the bearing, and a fault diagnosis model unit performs, by using a bearing fault diagnosis model obtained through training, pattern recognition on the fault feature index to diagnose a fault state of the bearing.

Abstract: An IGBT chip having a ?-shape mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a gate region and two active regions located at two sides of the gate region. The gate region includes a trench gate and a planar gate that is located on a surface of the gate region, and the planar gate is connected with the trench gate and formed a ?-shape mixed structure. In this way, the IGBT chip can have a significantly improved chip density, while retaining features of low power consumption and high current density of the trench gate and a feature of a wide safe operating area of the planar gate.

Abstract: Provided are a method and system for controlling a voltage. The method includes: acquiring a current output voltage of an inverter; calculating a current voltage error of the current output voltage relative to a given output voltage; inputting the current voltage error into a fuzzy controller to determine a target output voltage of the inverter; determining an amplitude adjustment command based on a difference between an amplitude of the target output voltage and an amplitude of the current output voltage; determining a phase adjustment command based on a difference between a phase of the target output voltage and a phase of the current output voltage; and adjusting an amplitude and a phase of an output voltage of the inverter according to the amplitude adjustment command and the phase adjustment command respectively, to maintain the output voltage of the inverter within a preset range.

Abstract: We disclose herein a semiconductor device sub-assembly comprising a plurality of semiconductor units of a first type, a plurality of semiconductor units of a second type; a plurality of conductive blocks operatively coupled with the plurality of semiconductor units, a conductive malleable layer operatively coupled with the plurality of conductive blocks, wherein the plurality of conductive blocks are located between the conductive malleable layer and the plurality of semiconductor units. In use, at least some of the plurality of conductive blocks are configured to apply a pressure on the conductive malleable layer, when a predetermined pressure is applied to the semiconductor device sub-assembly. At least one semiconductor unit of a second type is configured to withstand an applied pressure greater than a threshold pressure.

Abstract: We disclose herein a gate controlled bipolar semiconductor device comprising: a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region; a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region; at least two active trenches each extending from a surface into the drift region; an emitter trench extending from the surface into the drift region; wherein each first contact region adjoins an active trench so that, in use, a channel is formed along said each active trench and within the body region; wherein the second contact region adjoins the emitter trench; and where

Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.

Abstract: Provided are a method and system for controlling a voltage. The method includes: acquiring a current output voltage of an inverter; calculating a current voltage error of the current output voltage relative to a given output voltage; inputting the current voltage error into a fuzzy controller to determine a target output voltage of the inverter; determining an amplitude adjustment command based on a difference between an amplitude of the target output voltage and an amplitude of the current output voltage; determining a phase adjustment command based on a difference between a phase of the target output voltage and a phase of the current output voltage; and adjusting an amplitude and a phase of an output voltage of the inverter according to the amplitude adjustment command and the phase adjustment command respectively, to maintain the output voltage of the inverter within a preset range.

Abstract: An electrical brake energy feedback system, including a rectifier and inverter circuit, an intermediate DC circuit, a first voltage detection circuit configured to detect voltages of positive and negative terminals of the intermediate DC circuit to obtain a first voltage signal, a bidirectional DC/DC conversion circuit and/or a regeneration control circuit, and an electrical energy flow control circuit for controlling operating states of the bidirectional DC/DC conversion circuit and/or the regeneration control circuit according to the first voltage signal. With this system, the electrical brake energy can be recovered to the greatest extent when the vehicle is running in different zones, and the electrical brake energy consumed by the brake resistor is as little as possible. Accordingly, the vehicle and the entire transportation system can be more energy-saving and environmentally friendly.

Abstract: An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region (3) and a gate region. The gate region includes a planar gate region (1) and a trench gate region (2), which are respectively disposed at both sides of the source region (3). A planar gate and a trench gate are compositely disposed on the same cell (16), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.

Abstract: A device for diagnosing a fault in a bearing of a motor is provided. If the device operates in a fault diagnosis mode, a current signal acquisition unit acquires a real-time current signal of the motor, a residual signal acquisition unit extracts harmonic signals from the real-time current signal of the motor acquired by the current signal acquisition unit and remove a fundamental signal and a harmonic signal from the real-time current signal of the motor to acquire a residual signal, a fault feature extraction unit analyzes the residual signal in both time domain and frequency domain to extract a fault feature index of the bearing, and a fault diagnosis model unit performs, by using a bearing fault diagnosis model obtained through training, pattern recognition on the fault feature index to diagnose a fault state of the bearing.

Abstract: A method for controlling a main circuit of a traction system is provided. The method includes: under a braking condition, controlling a protection module to be turned off; controlling the protection module to be turned on and monitoring a first current detected by a first current sensor in a case that a rail vehicle runs on a charged third rail; and controlling the protection module to be turned off and monitoring whether the rail vehicle runs on a charged third rail in a case that the first current is less than a first preset current.

Abstract: An electrical brake energy feedback system, including a rectifier and inverter circuit, an intermediate DC circuit, a first voltage detection circuit configured to detect voltages of positive and negative terminals of the intermediate DC circuit to obtain a first voltage signal, a bidirectional DC/DC conversion circuit and/or a regeneration control circuit, and an electrical energy flow control circuit for controlling operating states of the bidirectional DC/DC conversion circuit and/or the regeneration control circuit according to the first voltage signal. With this system, the electrical brake energy can be recovered to the greatest extent when the vehicle is running in different zones, and the electrical brake energy consumed by the brake resistor is as little as possible. Accordingly, the vehicle and the entire transportation system can be more energy-saving and environmentally friendly.

Abstract: A braking force distribution method and system for multiple marshalling train compartments are provided. The method includes: determining a current train compartment of multiple target marshalling train compartments, calculating current axel loads of axels of the current train compartment, and distributing braking forces for the axels of the current train compartment in a positive correlation manner based on the current axel loads of the axels. The braking forces of the axels are distributed by using an axel load compensation technology. A braking force generated by an axle with a small axle load is reduced according to a load-decreasing amount of the axle load, while a braking force generated by an axle with a great axle load is increased according to a load-increasing amount of the axle load, so that the braking forces generated by the axles match the axle loads.

Abstract: The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N? drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer.

Abstract: A method for tractive force distribution for a power-distributed train is provided, which includes: determining a current motor car of a target train; acquiring parameter information of the current motor car; calculating, based on the parameter information, axle load transfer at four axles of the current motor car; calculating, based on the axle load transfer at the four axles of the current motor car, current axle loads on the four axles of the current motor car; and performing, based on the current axle loads on the four axles, distribution of tractive forces of the four axles of the current motor car using an electrical control compensation technology.

Abstract: A silicon carbide MOSFET device is disclosed. The silicon carbide MOSFET device includes a gate oxide layer which is constituted by a first gate oxide layer and a second gate oxide layer. A thickness of the second gate oxide layer is larger than a thickness of the first gate oxide layer. Through dividing the gate oxide layer into two parts with different thicknesses, i.e., enabling the gate oxide layer to have a staircase shape, an electric field strength of the gate oxide layer can be effectively reduced, while a threshold voltage and a gate control property of the device are not affected. An on-resistance of the device can be reduced through increasing a width of a JFET region. A method for manufacturing the silicon carbide MOSFET device is further disclosed.

Abstract: Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Abstract: A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

Abstract: The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N- drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer.

Abstract: A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.