Patents Examined by A. Seter
  • Patent number: 7371598
    Abstract: The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: May 13, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Osamu Nakamura, Junko Sato