Abstract: Provided is an electrostatic dust filter including a frame that is opened back and forth and forms a space through which air passes, a chemical absorbent that is accommodated in the space and absorbs harmful substance in the air, a mesh member that covers the front of the frame and has a plurality of pores through which the air passes, a ground electrode that covers the rear of the frame and has the plurality of pores through which the air passes, and is grounded, and a voltage electrode that is disposed to opposite to the ground electrode with respect to the mesh member and applied with a high voltage.

Abstract: A portable rechargeable personal ionic air purifier energizing a personal airspace and cleaning particulate pollutants therefrom provides removable attachment of ion emitter and housing subassemblies by magnetic attraction, provides an electrically grounded conductive member external to the housing that releasably clips a lanyard or article of clothing, includes a decorative surround and provides an external ground plate for use with a desktop mount, armband or other accessory.

Abstract: An electrostatic charging air cleaning device. The device includes a pre-charger configured to generate a corona discharge to electrostatically charge particulate matter in an air stream. The device further includes a separator downstream from the pre-charger configured to convey the electrostatically charged particulate matter and formed of an insulative material. The device also includes a collection electrode configured to receive and to absorb the conveyed electrostatically charged particulate matter. The collection electrode includes a substrate material and a coating layer coated onto the substrate material. The coating layer includes a carbon black material and a polymeric binder. The substrate material is a metal plate including mechanical perforations.

Abstract: A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.

Abstract: A system for measuring the orientation angle of automotive collision avoidance sensors. An adaptive spacer is supported to conformably interengage the collision avoidance sensor module of a vehicle being repaired. The adaptive spacer extends outwardly from the sensor module and the orientation angle of the sensor module is transposed by the adaptive spacer to form an angular guideline on an underlying calibration board, mat or other surface. The angle between the angular guideline and a base guideline parallel to the center line of the vehicle and the angular guideline is measured to provide the orientation angle of the vehicle's sensor module.

Abstract: A method of automatically generating baggage driver staffing recommendations including receiving a first set of flight parameters for a first flight, creating a first predictive staffing model for the first flight by simulating missed bag quantities for a range of driver quantities using a first computer-implemented machine learning model and the first set of flight parameters, and automatically generating a first recommended driver quantity predicted to result in a quantity of missed bags using the first predictive staffing model and a threshold quantity of missed bags. The missed bag quantities are simulated using a simulator, the first computer-implemented machine learning model is configured to relate driver quantities and flight parameters to expected missed bag quantities, and the first predictive staffing model relates predicted quantities of missed bags to quantities of staffed drivers.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: A method of forming a microelectronic device comprises forming openings in an interdeck region and a first deck structure, the first deck structure comprising alternating levels of a first insulative material and a second insulative material, forming a first sacrificial material in the openings, removing a portion of the first sacrificial material from the interdeck region to expose sidewalls of the first insulative material and the second insulative material in the interdeck region, removing a portion of the first insulative material and the second insulative material in the interdeck region to form tapered sidewalls in the interdeck region, removing remaining portions of the first sacrificial material from the openings, and forming at least a second sacrificial material in the openings. Related methods of forming a microelectronic devices and related microelectronic devices are disclosed.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

Abstract: A computer-implemented method for managing crop harvesting activities is implemented by a harvest advisor computing device in communication with a memory. The method includes receiving an initial date of a crop within a field, receiving an initial moisture value associated with the crop and the initial date, and receiving a target harvest moisture value associated with the crop. The method also includes receiving field condition data associated with the field. The method further includes computing, by the harvest advisor, a target harvest date for the crop based at least in part on the initial date, the initial moisture value, the field condition data, and the target harvest moisture value, and displaying the target harvest date for the crop to the grower for harvest planning. The target harvest date indicates a date at which the crop will have a present moisture value approximately equal to the target harvest moisture value.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: Disclosed are semiconductor devices and/or method of fabricating the same. The semiconductor device comprises a substrate including first and second regions, a first active pattern on the first region and including a pair of first source/drain patterns and a first channel pattern including first semiconductor patterns, a second active pattern on the second region and including a pair of second source/drain patterns and a second channel pattern including second semiconductor patterns, a support pattern between two vertically adjacent first semiconductor patterns, and a first gate electrode and a second gate electrode on the first channel pattern and the second channel pattern. A channel length of the first channel pattern is greater than that of the second channel pattern. A ratio of a width of the support pattern to the channel length of the first channel pattern is in a range of 0.05 to 0.2.

Abstract: A method for preparing a cultured dairy product comprising: blending water, ultra-filtered milk and other ingredients to form a blended milk containing about 1.6% lactose, about 3.9% protein and about 0.8% fat; culturing the blended milk by adding a starter culture and fermenting the blended milk to produce a cultured dairy product; and processing the cultured dairy product with only mechanical steps to form a finished cultured dairy product containing less than 4% total sugar and less than 0.1% lactose.

Abstract: A semiconductor memory according to an embodiment includes first and second areas, an active region, a non-active region, a first stacked body, a plurality of first pillars, a first contact, a second stacked body, and a second contact. The active region includes part of each of the first and second areas. The non-active region includes part of each of the first and second areas. The second stacked body is in the non-active region. The second stacked body includes second insulators and second conductors which are alternately stacked. A second contact is in contact with a second conductor in a first interconnect layer and a second conductor in a second interconnect layer.

Abstract: Provided is an electrostatic dust collecting apparatus including a first electrode, a second electrode spaced apart from the first electrode along a first direction, at least one support member configured to maintain an interval between the first electrode and the second electrode spaced apart from each other, and a support bar formed to extend along the first direction. The at least one support member each include at least one electrode insertion groove formed to allow at least one of the first electrode or the second electrode to be inserted thereinto and a coupling hole extending along the first direction and formed to allow the support bar to be coupled thereto.

Abstract: The application is directed to a Lactobacillus plantarum strain, having the ability to generate a fermented milk presenting a high thickness and/or a high ropiness and/or a high thickness in mouth. The application also concerns a Lactobacillus plantarum strain, having the ability to generate a fermented milk presenting a high thickness and/or a high ropiness and/or a high thickness in mouth, further being a low post acidification strain at the temperature of fermentation. The application is also about a method to manufacture fermented product, in particular a fermented dairy product, using a L. plantarum strain of the invention or a bacterial composition, composition or kit-of part comprising a L. plantarum strain of the invention.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.

Abstract: A wearable air purifier includes at least one wearable component, a control unit, at least one speaker assembly and at least one negative ion generating component. The control unit is disposed inside the at least one wearable component. The at least one speaker assembly is disposed on the at least one wearable component and electrically connected to the control unit. The at least one negative ion generating component is disposed on the at least one wearable component and electrically connected to the control unit. The control unit provides high-voltage currents to the at least one negative ion generating component to enable the at least one negative ion generating component to emit negative ions by corona discharging, and the control unit further provides audio signals to the at least one speaker assembly to activate the at least one speaker assembly to generate sound.

Abstract: A multiplex polymerase chain reaction assay that targets nine tetranucleotide short tandem repeat (STR) markers in the mouse genome. Unique profiles were obtained from seventy-two mouse samples that were used to determine the allele distribution for each STR marker. Correlations between allele fragment length and repeat number were determined with DNA Sanger sequencing. Genotypes for L929 and NIH3T3 cell lines were shown to be stable with increasing passage numbers as there were no significant differences in fragment length with samples of low passage when compared to high passage samples. In order to detect cell line contaminants, primers for two human STR markers were incorporated into the multiplex assay to facilitate detection of human and African green monkey DNA. This multiplex assay is the first of its kind to provide a unique STR profile for each individual mouse sample and can be used to authenticate mouse cell lines.