Abstract: The present invention employs a high density interconnect method to take advantage of a packaging arrangement in which full customization of an integrated circuit chip package is providable in a single metallization layer. The integrated circuit chips are positioned to take full advantage of a wiring layer which includes a plurality of periodically interrupted conductor patterns. All of the customization is provided in a single layer which may be readily fabricated and produced in a single day making it possible for extremely rapid turn around time in the design of complex integrated circuit systems, particularly those constructed from readily available integrated circuit components including microprocessors, random access memory chips, decoders and the like. An integrated circuit is also disclosed for fully taking advantage of the capabilities of testing made available by the high density interconnect system.