Abstract: A method for processing a carrier may include: forming a plurality of structure elements at least one of over and in a carrier, wherein at least two adjacent structure elements of the plurality of structure elements have a first distance between each other; depositing a first layer over the plurality of structure elements having a thickness which equals the first distance between the at least two adjacent structure elements; forming at least one additional layer over the first layer, wherein the at least one additional layer covers an exposed surface of the first layer; removing a portion of the at least one additional layer to expose the first layer partially; and partially removing the first layer, wherein at least one sidewall of the at least two adjacent structure elements is partially exposed.

Abstract: A thin film transistor substrate for a display device having a plurality of thin film transistors and pixel electrodes connected to the thin film transistors, said thin film transistor substrate includes: a plurality of pad electrodes in a non-display area of the display device for applying signals to the plurality of thin film transistors in a non-display area of the display device; a protective film covering the pad electrodes in the non-display area; and a slit in the protective film adjacent to at least one of the plurality of pad electrodes.

Abstract: A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality of color filters on the passivation layer corresponding to the photodiodes; a planarization layer on an entire surface of the semiconductor substrate including the color filters; and a microlens on the planarization layer corresponding to each of the color filters and having a bottom diameter of 2.5 to 3.0 ?m.