Patents Examined by Abudlfattah Mustapha
  • Method of fabricating fin-field effect transistors (finFETs) having different fin widths
    Patent number: 9287402
    Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 15, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Woo Oh, Shincheol Min, Jongwook Lee, Choongho Lee