Abstract: The present invention relates to RAM circuits comprising memory cells and logic circuitry wherein each of the memory cells comprise at least one Vertical MISFET device comprising a stack of several layers a source layer, a channel layer, a drain layer and a capacitor on the top of the stack of several layers of the Vertical MISFET device.

Abstract: A magnetic circuit structure in a disk unit which can be manufactured at low costs. The magnetic circuit includes a main yoke manufactured by stacking a plurality of rolled steel plates and connecting them together by caulking. The magnetic circuit further includes an inner magnet, an outer magnet, and a side yoke all of which are mounted on the main yoke. Both ends of the inner magnet abut against a pair of shoulders formed on the main yoke, and both ends of the outer magnet abut against a pair of shoulders formed on the main yoke. Vertical movement of the inner magnet is prevented by a pair of presser plates and fixed to the main yoke, and vertical movement of the outer magnet is also prevented by a pair of presser plates and fixed to the main yoke.

Abstract: Information is recorded by applying weak and strong magnetic fields to a giant magnetoresistive medium having a pair of ferromagnetic layers, a nonmagnetic interlayer, and an antiferromagnetic layer. The medium preferably has a magnesium-oxide base layer, and may also have an electrode layer. The weak magnetic field magnetizes the ferromagnetic layers in the antiparallel state. The strong magnetic field magnetizes the ferromagnetic layers in the parallel state, which has lower electrical resistance than the antiparallel state. The recorded information is reproduced by detecting the electrical resistance of the medium, either between two electrodes contacting the surface of the medium, or between the electrode layer in the medium and an electrode contacting the surface of the medium.

Abstract: The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.

Abstract: The present invention relates to a magnetic disk unit of a high memory capacity wherein a magnetic head and a magnetic disk with a lubricant layer formed on the surface thereof are allowed to perform a relative motion in a mutually contacted state to write and read out information of a high recording density, and the invention is also concerned with the shape and material of the magnetic head suitable for a continual sliding motion of the head on the magnetic disk surface, as well as the lubricant layer formed on the disk surface. According to the present invention, the magnetic head, which has a slider surface of a predetermined curvature, is supported by an arm through a spring and is pushed onto the magnetic disk surface with the lubricant layer formed thereon, then with rotation of the magnetic disk, the lubricant layer liquefies and information is recorded or read out in a contacted state of the head and the disk.

Abstract: A magnetic recording medium includes a non-magnetic substrate, and a magnetic layer provided on the non-magnetic substrate. The value of the product Br.sub.1 .delta. of the residual flux density Br.sub.1 of the magnetic layer determined in a recording direction and the thickness .delta. of the magnetic layer is not less than 5 G.mu.m and not more than 180 G.mu.m; the value of the ratio of Br.sub.1 to the residual flux density Br.sub.2 determined in a direction parallel to the substrate plane and perpendicular to the recording direction, Br.sub.1 /Br.sub.2, is not less than 1.3 and not more than 3; the surface of the non-magnetic substrate has texture grooves therein extending predominantly in the recording direction; and the average roughness factor Ra of the surface of the magnetic layer determined in a direction perpendicular to the substrate plane and perpendicular to the recording direction is not less than 0.3 nm and not more than 1.9 nm. Alternatively, the value of the product Br.delta.

Abstract: A magnetic tape recording and reproducing plug-in unit including a case with a front plate having an insertion opening through which a magnetic tape cassette is inserted, a bottom plate, a top plate, and a pair of side plates each formed with a pair of guide slots arranged for guiding the cassette to a loading position. The slide plates are attached to the side plates so as to be slidable within the case, each slide plate formed with a pair of cam slots arranged for moving the cassette to the loading position. A cassette holder is disposed inside the pair of slide plates for holding the cassette and has pins extending through the cam slots into the guide slots of the side plates. A recording and reproducing device is mounted on the bottom plate. A driving device drives the slide plates. An electronic circuit is disposed at the rear of the recording and reproducing device.

Abstract: A movable platform is mounted on opposing guide rails within a disk drive. A head actuator and spindle motor are mounted on the movable platform. The platform moves on the guide rails from a forward position to a rearward position upon insertion of a disk cartridge into the disk drive. As the platform moves toward the rearward position, the elevation of the platform changes in order to bring the spindle motor into engagement with the hub of the disk cartridge. A latch member is pivotally mounted on one of the guide rails for latching the platform in its forward position when the disk drive is not in use.

Abstract: N type impurity regions are formed at the surface of N well similarly to a DRAM memory cell. Electrode layers corresponding to storage nodes and conductive layers 9a and 9b corresponding to cell plates are formed for predetermined impurity regions among the impurity regions. Conductive layers are isolated from each other electrically in a DC fashion and connected to electrode nodes VA and VB, respectively. The sets of capacitors formed by a predetermined number of memory cell capacitors connected in parallel through the N well are connected in series. As a result, a capacitor with excellent area efficiency which utilizes the characteristics of the memory cell capacitor can be realized.

Abstract: A thin film magnetic head is fabricated on a substrate by depositing a seed layer on the substrate. A lower magnetic layer is plated on the substrate in an opening provided in an insulative layer which is deposited on the seed layer. A plurality of magnetic layers are plated at one end of the lower magnetic layer to build-up and form a first side pole by using the above seed layer as a seed. Another plurality of magnetic layers are plated at the other end of the lower magnetic layer to build-up and form a second side pole by using the same seed layer as a seed. The first and second side poles thus formed include upper and lower ends, the lower ends being plated to the ends of the lower magnetic layer. A first upper pole is plated to the upper end of the first side pole. The first upper pole includes a gap end facing the second side pole. A gap region of nonmagnetic material is deposited adjacent the gap end of the first upper pole.

Abstract: A rotary driving apparatus controls the generation of vibration and noise due to high speed rotation, to realize high accuracy rotation, so that a storage apparatus such as a disk drive can have high speed rotation and improved storing density on its recording medium.The apparatus includes a fixed shaft for rotatably supporting a rotor, a bearing fitted between the shaft and the rotor, at least two projections projecting from the surface of the shaft, and a stator coil mounted on the projections. The projections absorb stator vibration, and isolate the head, the storage disk and other parts from the stator vibrations. A gap area is formed between the stator coil and the shaft to dampen vibrations created by the stator. The gap may be filled with vibration-absorbing material.

Abstract: The present invention provides a magnetic tape system which experiences a reduced, if not eliminated, amount of slippage between the drive roller of the tape drive system and the driven roller of the magnetic tape cartridge. The present invention employs a hard plastic driven roller having a slightly enlarged diameter portion to which an elastomeric, rubber-like material is bonded. The elastomeric material has the form of an annular sleeve or ring which is coextensive with a slightly enlarged diameter portion of the driven roller to provide a reduced slippage annular contact surface for contacting a portion of a rubber outer sleeve positioned on the capstan, or drive roller, of a conventional magnetic tape drive.

Abstract: A static random access memory cell having a plurality of active regions defined on a semiconductor substrate, includes a plurality of first bulk transistors having a first common gate electrode and first impurity-doped regions, the first common gate electrode and first impurity-doped regions being formed on a portion of the active regions; a plurality of second bulk transistors spaced from the first bulk transistors, the second bulk transistors including a second common gate electrode and second impurity-doped regions, the second common gate electrode and second impurity-doped regions being formed on a portion of the active regions; and a plurality of thin film transistors formed on the second bulk transistors and including the second common gate electrode and a conductive layer formed above the second common gate electrode, wherein the conductive layer overlaps and is substantially coextensive with the second common gate electrode.

Abstract: A non-volatile semiconductor memory cell employing a field effect transistor having a gate of the metal/ferroelectric structure or the metal/ferroelectric/metal/insulator insulator structure, wherein the ferroelectric layer is a layer of bismuth titanate containing bismuth more than the stoichiometric quantity or a piled layer of bismuth titanate of the stoichiometric composition and bismuth titanate containing bismuth more than the stoichiometric quantity, both of which have a less amount of dielectric constant and remanent polarization, thereby enabling the non-volatile memory cell to memorize and erase binary information with a less amount of voltage to be applied to the gate.

Abstract: A thin film "third axis" magnetic head is provided which is resistant to head wear which heads typically experience when operating in close proximity to a magnetic recording media. A relatively soft magnetic core is formed on the third axis surface of a hard insulative substrate. The magnetic core includes a gap region at the edge of the third axis surface. The gap region and a portion of the magnetic core adjacent the gap region are covered with a protective layer of hard material, such as diamond-like carbon (DLC). In this manner, a ruggedized sandwich-like head structure is formed including the hard substrate, the enclosed relatively soft magnetic core and the protective layer of hard DLC material.

Abstract: A liquid crystal display device comprises a plurality of redundancy lines formed on a substrate, and a signal line covering the plurality of redundancy lines, whereby the aperture ratio is effectively increased.

Abstract: A novel disk clamp apparatus to securely mount one or more data storage disks to the hub of a spindle motor using a minimal amount of clamping force and surface area of the data storage disks is disclosed. A plurality of engagement protrusions disposed on the mating surface of the disk clamp preferably penetrate the mating surface of the data storage disk. Corresponding engagement recesses on the mating surface of the data storage disk are formed from penetration of the engagement protrusions or, alternatively, are pre-formed on the mating surface of the data storage disk. The engagement protrusions may alternatively be disposed on the data storage disk mating surface, while the corresponding engagement recesses are disposed on the clamp mating surface. In another embodiment, interfacial particles are disposed between the mating surfaces of the disk clamp and the data storage disk which penetrate the respective mating surfaces when pressed together.

Abstract: A disk drive apparatus, by using an integrated base structure made up of a base portion and a printed circuit board, and an integrated cover structure made up of a cover casting and a printed circuit board, is able to achieve an overall thickness of 5 millimeters, so that such disk drive apparatus can meet the current PCMCIA card standard for Type II cards.

Abstract: Method of manufacturing a thin-film magnetic head provided with a transducing element (23) and at least one flux-guiding element (17a, 17b). An electrically conducting layer (8) of a non-magnetic material and a second electrically insulating layer (9) of a non-magnetic material are successively formed on a first electrically insulating layer (5) of a non-magnetic material. The second electrically insulating layer is subsequently provided with at least an interruption exposing a portion of the electrically conducting layer. Subsequently, the flux-guiding element is formed by electrodepositing a soft-magnetic material on said portion until the interruption is filled, whereby the flux-guiding element and the second electrically insulating layer constitute an at least substantially plane surface on which an electrically insulating spacer layer (21) is formed. Subsequently, the transducing element is provided on the spacer layer.

Abstract: A semiconductor device comprising at least one SiC semiconductor layer; and passivation layers applied on at least a portion of a surface of the SiC semiconductor layer for passivation thereof; the passivation layers comprising at least a substantially insulating layer comprising crystalline AlN and placed next to the SiC semiconductor layer and a semi-insulating layer allowing a weak current to flow therein in a blocking state of the device; wherein the semi-insulating layer comprises at least one first sub-layer and at least one second sub-layer, the at least one first sub-layer having a smaller gap between a conduction band and a valence band thereof than the at least one second sub-layer and the at least one second sub-layer having dopants for auto-ionization thereof by transport of charge carriers thereof to a deeper energy state in the semi-insulating sub-layer.