Abstract: An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer (18) and a doped semiconductor layer (14). The trench simultaneously fulfils a multiplicity of functions, namely an insulating function between adjacent components, the patterning of the charge-storing layer and also the subdivision of doping layers of the semiconductor layer (14).

Abstract: In a large-sized substrate for use in liquid crystal display devices, microcracks in a gate insulating film are prevented from being generated, whereby warpage of the substrate is suppressed. In order to solve the problems, in thin film transistors arrayed on a glass substrate, the gate insulating film is made thicker only in the portion that is directly under a gate line layer.

Abstract: An electro-optical device comprises first and second substrates (10, 20) disposed facing each other, an interconnect (14) formed on the surface of the first substrate (10) opposing the second substrate (20), and a conductive member (40) passing through the second substrate (20) and reaching both surfaces of the second substrate (20), and the conductive member (40) and interconnect (14) are electrically connected between the first and second substrates (10, 20).

Abstract: Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting the collector (5) under the base (7) along two parallel sides of the base mesa (7—FIG. 4), and providing a sloped collector edge (5—FIG. 6) along the remaining two parallel sides of the base. The foregoing is accomplished by selective etching and with the four sides of the mesa regions oriented as a non-rectangular parallelogram (7, 9—FIG. 4) in which one pair of sides is in parallel with one of the said [0 0 1] and [0 0 {overscore (1)}] planes of the crystalline structure and the other pair of sides in parallel with one of the [0 1 1] and [0 {overscore (1)} {overscore (1)}] planes of the crystalline structure.

Abstract: A transparent filter including a sheet-shaped body and numerous linear conductive elements arrayed on a surface thereof, which is adapted to be disposed in front of an image device having rectangular pixels; wherein the conductive elements with a linewidth of 50 &mgr;m or less are arrayed on the sheet-shaped body in two directions with a pitch P1 and a pitch P2, respectively; an aperture ratio of the filter is not less than 70%; and when lengths of a pixel of the image device in the vertical direction Y and in the horizontal direction X are denoted by W1 and W2, respectively, P1, P2, W1 and W2 satisfy a relation expressed by the following Equation (1) and Equation (2), n1+0.35≦W1/P1≦n1+0.65  (1) n2+0.35≦W2/P2≦n2+0.65  (2) The use of the transparent filter can increase the aperture ratio in comparison with that of a conventional mesh, and besides the disposal thereof in front of an image device having rectangular pixels can make the moire inconspicuous.

Abstract: An array substrate for use in a liquid crystal display device includes a thin film transistor as a switching element, having a gate electrode, a source electrode and a drain electrode, wherein the gate electrode is a portion of a gate line near the crossing of the gate and data lines, and has an inverted “T”-shaped opening or a rectangularly-shaped opening. The drain electrode is shaped like the inverted “T”-shape and corresponds to the opening of the gate electrode. The source electrode surrounds the drain electrode along the steps of the semiconductor layer. Accordingly, in the thin film transistor having this structure, the gate electrode is only overlapped by the edges of the drain electrode. And thus, the gate-drain parasitic capacitance is reduced and minimized. Also, variations in the gate-drain parasitic capacitance are prevented. As a result, a high resolution is achieved and the picture quality is improved in the liquid crystal display device.

Abstract: A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.