Abstract: A lithographic apparatus in which alignment marks on the substrate are inspected during the exposure of the substrate to optimize the exposure conditions.

Abstract: A system and method are used to limit a proportion of a programmable patterning means used to pattern a substrate. This is done such that a size of a repeated pattern to be exposed on the substrate is an integer multiple of a size of a pattern exposed on the substrate by the patterned beam.

Abstract: An optical integrator having characteristics to reduce effects of manufacturing errors of many minute refraction surfaces integrally formed by, for example, etching on an illumination intensity distribution. An optical integrator (8) comprising an integrally formed plurality of first minute refraction surfaces (80a) and an integrally formed plurality of second minute refraction surfaces (80b). A parameter ? satisfies conditions, |?|<0.2 (where ?=(??1)3·NA2/?n2), where a refracting power ratio ?a/?b between ?a, a refracting power of the first minute refraction surfaces and ?b, a refracting power of the second minute refraction surfaces is ?, numerical aperture on an emission side of the optical integrator is NA, and a difference between a refraction index of a medium on a light entrance side of the second minute refraction surfaces and a refraction index of a medium on a light emission side of the second minute refraction surfaces is ?n.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: A method of detecting developer endpoint. The method includes illuminating a device region of a substrate with a first optical beam prior to initiating a development stage of processing and detecting a baseline optical signal reflected from the device region of the substrate. The method also includes illuminating the device region of the substrate with a second optical beam during a development stage of processing and detecting an endpoint optical signal reflected from the device region of the substrate. The method further includes comparing the baseline optical signal to the endpoint optical signal and determining a developer endpoint based on the comparing step.

Abstract: An apparatus and method maintain immersion fluid in the gap adjacent to the projection lens during the exchange of a work piece in a lithography machine. The apparatus and method include an optical assembly that projects an image onto a work piece and a stage assembly including a work piece table that supports the work piece adjacent to the optical assembly. An environmental system is provided to supply and remove an immersion fluid from the gap between the optical assembly and the work piece on the stage assembly. After exposure of the work piece is complete, an exchange system removes the work piece and replaces it with a second work piece. An immersion fluid containment system maintains the immersion liquid in the gap during removal of the first work piece and replacement with the second work piece.

Abstract: The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a off axis light to reduce the effect of zero order light to improve the process window for maskless phase shift lithography systems and methodologies. A lithography system is provided. The lithography system provided uses off axis light beams projected onto a mirror array configured to generate a phase shift optical image pattern. This pattern is projected onto a photoimageable layer formed on the target substrate to facilitate pattern transfer.

Abstract: A projection optical system includes an optical element that includes and locally uses a reflective or refractive area that is substantially axially symmetrical around an optical axis, the optical element being rotatable around the optical axis.

Abstract: A frame that prevents the decrease in the exposure area by preventing the frame from curving inward by the tensile force of the pellicle membrane and makes it possible to obtain a pellicle having excellent dimensional accuracy and attachment position accuracy on a photomask, and a pellicle for photolithography using the frame. A pellicle frame of the present invention comprises, in at least one pair of opposite side members of a generally rectangular frame body, a portion with an arc form curved outward in the center portion of the side members, portions with an arc form curved inward on both sides of the portion curved outward, and portions with a straightly linear form on the outer sides of the portions curved inward. The radius of the portions with an arc form curved inward is preferably ? or larger of the radius of the portion with an arc form curved outward.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: A lithography arrangement and lithographic method is described which permits exposure of a substrate with radiation simultaneously with good intensity and contrast. A means for generating electromagnetic radiation and for directing the electromagnetic radiation onto a mask is provided. The mask has structures that essentially run along a predeterminable course direction on the mask. The electromagnetic radiation is at least partially TM-polarized relative to the course direction, so that the TM-polarized electromagnetic radiation has a polarization direction at an angle of 90° with respect to the course direction. A receptacle device for receiving a substrate to be exposed is positioned so that the radiation impinges on the substrate. A means for rotating the polarization direction of the TM-polarized electromagnetic radiation transmitted through the mask is arranged between the mask and the receptacle device to form TE-polarized electromagnetic radiation.

Abstract: Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.

Abstract: A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.

Abstract: A reflection mirror apparatus, used in a reflection optical system of an exposure apparatus which performs exposure processing by guiding exposure light by reflection, has a mirror having a reflection surface to reflect the exposure light, and radiation plates for radiation-cooling provided in positions away from an outer surface of the mirror. The radiation plates are provided so as to ensure a passage area for the exposure light incident on and reflected from the reflection surface of the mirror. Further, the respective radiation plates are temperature-controlled by cooling liquid flowing through cooling pipes. Thus the temperature rise of the mirror used in the reflection optical system of the exposure apparatus can be suppressed, and the accuracy of surface form of the mirror reflection surface can be maintained.

Abstract: An illumination optical system that is used for an exposure apparatus that includes a mirror and exposes an object, illuminates a surface to be illuminated using light from a light source, and includes a filter member arranged at a position that substantially has a Fourier transform relationship with the surface to be illuminated, the filter member including a transmittance distribution preset to correct a non-uniformity of a transmittance distribution of the illumination optical system caused by the mirror.

Abstract: Exposure equipment adapted for use in the manufacture of semiconductor devices and a related control are disclosed. A wafer stage in the exposure equipment comprises an image sensor adapted to detect patterned light from the reticle. Image data corresponding to the detected patterned light is compared to reference image data to verify a state of overlay mismatch of reticle pattern accuracy prior to wafer exposure.

Abstract: A lithographic apparatus and method include an illumination system that supplies a beam of radiation, an array of individually controllable elements that pattern the beam, and a projection system that directs the patterned beam a substrate supported on a substrate table. The projection system defines a pupil. Either the pupil or the array of individually controllable elements is imaged onto a target portion of the substrate. The projection system includes an array of lenses with each lens in the array arranged to direct a respective part of the patterned beam onto a respective part of the target portion of the substrate. In one example, each of the individually controllable elements is selectively controllable to direct a respective part of the beam away from the pupil such that the proportion of the beam passing through the pupil is adjusted.

Abstract: A lithographic projection apparatus including an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, the patterning device configured to impart the beam with a pattern in its cross section, a substrate table configured to hold a substrate, a projection system configured to project the patterned radiation onto a target portion of the substrate, a plurality of level sensors for sensing a level of a substrate carried on the substrate table at a plurality of different positions, and a system for determining the position of the substrate table.

Abstract: Disclosed is an exposure apparatus having a specific structure that includes a cold trap plate for attracting contaminant substances which might cause a decrease of reflectance of a mirror when adhered thereto, and a radiation shield member for preventing excessive cooling of the mirror or the like by the cold trap plate.

Abstract: An optical imaging system is disclosed for selective thermal transfer of a material from a donor film to a substrate. The imaging system includes a light source assembly that is configured to emit a patterned light beam. The patterned light beam includes a plurality of discrete output light segments where the segments at most partially overlap. The imaging system further includes a light relay assembly that receives and projects the plurality of discrete output light segments onto a transfer plane so as to form a projected light segment by a substantial superposition of the plurality of discrete output light segments. When a donor film that includes a transferable material is placed proximate a substrate that lies in the transfer plane, the projected light segment is capable of inducing a transfer of the transferable material onto the substrate.