Abstract: A platform for processing a substrate in a processing chamber of a reactor includes an annular body with a recessed, generally planar substrate support surface for supporting the substrate during processing. The platform includes at least one coupler for releasably securing the platform to a platform support surface positioned inside the processing chamber. The platform is releasably secured to the platform support surface in the processing in a manner which permits unrestrained relative thermal expansion of the platform. The substrate support surface is sized to permit unrestrained radial thermal expansion of the substrate and, preferably, recessed to support the device side of the substrate substantially flush with an upper surface of the platform. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides the support surface for supporting the platform during processing.

Abstract: Fluid bearings, vacuum chucks and methods for producing these devices. One example of a method for forming a fluid bearing includes forming a plate having a face surface and a bonding surface, coupling a first side of a body to the bonding surface, placing the face surface of the plate against a predetermined surface, and generating a pressure difference to conform the face surface to the predetermined surface. One example of a fluid bearing of the invention includes a plate support and a flexible bearing plate having a bonding surface which is attached to the plate support with an adhesive which is flexible before hardening. The flexible bearing plate conforms to a predetermined surface during a portion of the time that the adhesive hardens. Examples of vacuum chucks, and methods for forming vacuum chucks, and other aspects of the invention are described.

Abstract: A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps.

Abstract: An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal.The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.

Abstract: A wafer fabrication system and method improves the structural integrity of capacitor structures. The wafer fabrication system contains an etching area and a deposition area which are connected with a common vacuum. In the etching area, the support material surrounding the bottom electrode of a stacked capacitor is removed with vapor etching techniques. The exposed bottom electrode of the stacked capacitor is then robotically transferred within the common vacuum to the deposition area where a dielectric layer is applied to the exposed bottom electrode.