Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

Abstract: An electronic device includes a display, a camera, and a processing device. The processing device is configured to determine whether (i) a user's face or eyes are within the camera's field of view or (ii) a gaze of the user is directed towards the display. The processing device is also configured, in response to determining that (i) the user's face or eyes are not within the camera's field of view or (ii) the gaze of the user is not directed towards the display, to modify a user interface button presented on the display. The user interface button may represent a shutter button configured to cause the camera or another camera of the electronic device to capture one or more images.

Abstract: A solid-state imaging device adapted to encrypt data is described. The solid-state imaging device may include a sensor die comprising an array of imaging pixels formed on a first side of the sensor die and first wiring layers formed on a second side of the sensor die, wherein at least one of the imaging pixels is configured to generate specific signals; a logic die comprising second wiring layers formed on a first side of the logic die; and an encryption processor on the logic die configured to generate encrypted data using the specific signals. The first side of the logic die may be mounted adjacent to the second side of the sensor die and the first wiring layers electrically connect to the second wiring layers, wherein the at least one of the imaging pixels, the encryption processor, and a connecting conductor in which the specific signals pass through from the at least one of the imaging pixels to the encryption processor are located interior to the solid-state imaging device.

Abstract: A camera module and array camera module with circuit board unit and photosensitive unit and manufacturing method thereof is provided. The array camera module comprises two or more camera lenses and a circuit unit. The circuit unit comprises a circuit board portion for electrically connecting two or more photosensitive sensors of the array camera module, and a conjoined encapsulation portion integrally encapsulated on the circuit board portion. The camera lenses are respectively arranged along the photosensitive paths of the photosensitive sensors.

Abstract: A pixel circuit for background light suppression includes: a 2-tap pixel circuit including first and second pixel capacitors, first and second storage switches, and first and second transfer switches; an in-pixel sigma delta circuit including a plurality of switching switches and a storage capacitor for storing charge transferred from the first and second pixel capacitors; an adaptive sigma delta controller configured to determine switching states of the plurality of switching switches according to a first state of the first pixel capacitor, or a second state of the second pixel capacitor, or both; and a chopping controller configured to instruct the storage switches and the transfer switches of the 2-tap pixel circuit to be selectively switched according to an output of the adaptive sigma delta controller.

Abstract: A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

Abstract: An imaging apparatus includes: an imager to capture a subject image via an optical system including a focus lens to generate image data for each first frame period; a recorder to intermittently record image data for each frame captured by the imager in a second frame period; a focusing driver to adjust a focus lens position; and a controller to perform image processing for scaling an image indicated by the image data based on the focus lens position. The focusing driver repeats moving and stopping the focus lens alternately. When image processing of the scaling is performed on image data to be recorded by the recorder, the controller adjusts a timing at which the focusing driver starts movement of the focus lens to a timing at which a thinned-out frame is captured, and scales an image indicated by image data that is a frame at stopping of the focus lens.

Abstract: A solid-state imaging element includes a pixel and an image processing unit. The pixel has a common transistor, a charge accumulation unit, and a power supply. The common transistor has a first terminal and a second terminal. The common transistor maintains a voltage of the first terminal at a predetermined voltage with a voltage applied from the power supply and outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the second terminal, based on a condition that an element voltage is a ground voltage. The common transistor outputs a voltage corresponding to a change in a voltage of the charge accumulation unit from the first terminal, based on the element voltage is higher than the ground voltage. The image processing unit generates a luminance image according to a change in the voltage output from the second terminal of the common transistor.

Abstract: A pixel includes: a detection node; a first normally on transistor connected between the detection node and a rail for applying a first potential; and a second transistor whose gate is connected to the detection node. An image sensor includes a plurality of the pixels and a control circuit configured to apply, during for a phase of initializing the detection node, the first potential to the gate of the first transistor.

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Abstract: There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.

Abstract: A camera module and array camera module with circuit board unit and photosensitive unit and manufacturing method thereof is provided. The array camera module includes two or more camera lenses and a circuit unit. The circuit unit includes a circuit board portion for electrically connecting two or more photosensitive sensors of the array camera module, and a conjoined encapsulation portion integrally encapsulated on the circuit board portion. The camera lenses are respectively arranged along the photosensitive paths of the photosensitive sensors.

Abstract: An integrated image sensor and lens assembly may include a lens barrel, a collet, and a lens mount. The lens barrel may be coupled to the collet which is coupled to the lens mount. The lens barrel and the collet may each include a fastening structure reciprocal to each other. Alternatively, the collet and the lens mount may each include a fastening structure reciprocal to each other. The optical distance between the set of lenses and the image sensor may be tuned such that the focal plane of the lenses coincides with the image plane. The fastening structures allow the lens barrel to be adjusted relative to the lens mount in order to shift the focal plane in a direction along the optical axis to compensate for focal shifts occurring during assembly/cure and/or temperature cycling.

Abstract: An image capturing apparatus includes a plurality of photoelectric conversion elements, a first selection unit, and a second selection unit. Each of the photoelectric conversion elements includes an avalanche diode and a counter. The photoelectric conversion elements have a first photoelectric conversion element and a second photoelectric conversion element. The first selection unit controls the first photoelectric conversion element. The second selection unit controls the second photoelectric conversion element. The first and second selection units are controlled by a first control line and a second control line. In a first mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where no signal is read from the second photoelectric conversion element. In a second mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where a signal is read from the second photoelectric conversion element.

Abstract: An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

Abstract: Methods, systems, and apparatus, including computer programs stored on a computer-readable storage medium, for video stabilization. In some implementations, a computer system obtains frames of a video captured by a recording device using an optical image stabilization (OIS) system. The computing system receives (i) OIS position data indicating positions of the OIS system during capture of the frames, and (ii) device position data indicating positions of the recording device during capture of the frames. The computing system determines a first transformation for a particular frame based on the OIS position data for the particular frame and device position data for the particular frame. The computing system determines a second transformation for the particular frame based on the first transformation and positions of the recording device occurring after capture of the particular frame. The computing system generates a stabilized version of the particular frame using the second transformation.

Abstract: An imaging device includes an imaging unit including a plurality of pixels, respectively including photoelectric converters and charge accumulation nodes that accumulate signal charge. The imaging unit outputs image data based on signals corresponding to the signal charge accumulated in the charge accumulators. The imaging device includes an image processing unit that processes the image data output by the imaging unit. The imaging unit sequentially outputs a plurality of pieces of image data in one frame period by performing readout nondestructively. The image processing unit generates difference image data by determining a difference between two pieces of image data, selects output image data from initial image data and the difference image data, and combines the output image data and normal readout image data included in the plurality of pieces of image data, to generate combination-result image data.

Abstract: A sensor control apparatus includes a readout control circuit and a region setting circuit. The readout control circuit controls an event-driven vision sensor including a sensor array that includes sensors that generate event signals when a change in incident light intensity is detected, in such a manner that the event signals are read out at a first frequency in a first region on the sensor array and that the event signals are read out at a second frequency higher than the first frequency in a second region on the sensor array. The region setting circuit changes at least part of the first region to the second region on the basis of the number of first event signals acquired by the readout in the first region within a given period of time or changes at least part of the second region to the first region on the basis of the number of second event signals acquired by the readout in the second region within the given period of time.

Abstract: A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal layer. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the small-photodiode region. The metal layer covers the first back-surface region, at least partially fills the trench, and surrounds the small-photodiode region in the cross-sectional plane. A method for fabricating a flicker-mitigating pixel-array substrate includes forming, on a back surface of a semiconductor substrate, a trench that surrounds a small-photodiode region of the semiconductor substrate in a cross-sectional plane parallel to a first back-surface region of the back surface above the small-photodiode region. The method also includes forming a metal layer on the first back-surface region and in the trench.

Abstract: The present invention discloses a display device including an optical film including a through hole; a display panel disposed on a surface of one side of the optical film, wherein the display panel includes a transparent area corresponding to the through hole; a camera including a camera lens, wherein the camera is inserted into the through hole and faces the transparent area; and a plurality of LED chips evenly arranged around the camera lens, wherein the LED chips are disposed in the through hole and between the camera and the transparent area.