Patents Examined by Alexander G. Ghylka
  • Plasma process for organic residue removal from copper
    Patent number: 6342446
    Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a conductive structure over the semiconductor substrate, the conductive structure comprised of an oxygen-sensitive conductor and having an exposed surface; oxidizing a portion of the conductive structure (step 313 of FIG. 1); and subjecting the conductive structure to a plasma which incorporates hydrogen or deuterium (step 315 of FIG. 1).
    Type: Grant
    Filed: September 29, 1999
    Date of Patent: January 29, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Patricia B. Smith, Antonio L. P. Rotondaro