Abstract: An object is to provide a semiconductor device having an insulated-gate transistor which operates at high speed with low power consumption and a manufacturing method thereof. Two source/drain regions (9) are selectively formed in the surface of a transistor formation region in a Si substrate (1), a stacked gate insulating film (25) is formed on the channel region between the source/drain regions (9, 9) in the Si substrate (1), and a gate electrode (3) is formed on the stacked gate insulating film (25). The stacked gate insulating film (25) has a three-layer structure composed of a HfSiO2 film (21), a HfO2 film (22) and a HfSiO2 film (23) each having a higher dielectric constant than Sio2. The HfSiO2 film (21) is less reactive than the HfO2 film (22) at the interface with the Si substrate (1) and the HfSiO2 film (23) is less reactive than the HfO2 film (22) at the interface with the gate electrode (3) (polysilicon layer (4)).

Abstract: A method and apparatus for vaporizing liquid source materials, where such vaporized source materials are supplied to a deposition tool such as Chemical Vapor Deposition (CVD) apparatus, and more particularly in such areas as Metalorganic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) applications, is disclosed. The method disclosed herein involves with increasing the temperature and the pressure of given liquid source materials to a high level of temperature and pressure states while maintaining the source materials in a liquid state, and then exposing the liquid source material instantaneously to a low pressure while maintaining the temperature of the liquid source material at the high temperature. Such sudden exposure to a low pressure makes the liquid source material vaporized, so that such vaporized source material can be supplied to such deposition tools as Metalorganic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) apparatus.