Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

Abstract: A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.

Abstract: A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the second photoresist film, applying a shrink material to an upper surface of the second photoresist film and an inside of the opening, and reacting the shrink material and the second photoresist film in the inside of the opening by heat-treating the first photoresist film, the second photoresist film and the shrink material, and removing an unreacted shrink material that do not react with the second photoresist film from the upper surface of the second photoresist film and the inside of the opening.

Abstract: A positive resist composition comprising a base polymer comprising repeat units consisting of a fluorinated carboxylate, fluorinated phenoxide, fluorinated sulfonamide, fluorinated alkoxide, fluorinated 1,3-diketone, fluorinated ?-keto ester or fluorinated imide anion and a nitrogen-containing cation having a tertiary ester structure exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.

Abstract: A positive resist composition comprising a base polymer comprising repeat units having the structure of a sulfonium salt of a fluorinated phenol exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: A photosensitive composition of a developable relief precursor includes at least one ethylenically unsaturated monomer as component E, at least one photoinitiator or photoinitiator system as component P, at least one water soluble and/or water dispersible binder as component B, and optionally, one or more additives as component A. Component E includes at least one ionic group and component E is present in an amount of 0.1 to 30 wt %, based on the total weight of the photosensitive composition.

Abstract: An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.

Abstract: A positive photosensitive resin composition including: an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof, a polymer compound having a structural unit formed by cyclopolymerization, and a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution.

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.

Abstract: A negative photosensitive resin composition including: an alkali-soluble resin containing at least one structure selected from a polyimide structure, a polyamide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof, a polymer compound having a structural unit formed by cyclopolymerization, a compound that generates an acid by light, and a heat crosslinking agent.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

Abstract: A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

Abstract: A compound represented by the following formula (1). The compound can be used as a film forming material for lithography or an optical component forming material. A resin may also be obtained using this compound as a monomer, a composition, a method for forming a resist pattern, a method for forming an insulating film, a method for forming a circuit pattern, and a method for purifying the above compound or resin.

Abstract: A positive photosensitive resin composition including: (A) an alkali-soluble resin containing at least one or more structures selected from a polyimide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a crosslinkable polymer compound containing a structural unit represented by the following general formula (1) and having a group crosslinked with the component (A); and (C) a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution, the resin composition and a positive photosensitive dry film derived therefrom that enable formation of a fine pattern and high resolution, have excellent mechanical characteristics even when cured at low temperatures, and have no degradation in adhesive force between before and after a high temperature and high humidity test.

Abstract: A method for building an etching-free hybrid nonlinear waveguide composed of a polymer and an ion-implanted nonlinear crystal is provided. A nonlinear crystal is pretreated, and subjected to ion implantation to obtain an ion-implanted nonlinear crystal. The ion-implanted nonlinear crystal is spin-coated with a photoresist, and subjected to electron beam exposure, heating, and developing, so as to obtain a hybrid optical waveguide composed of a polymer and a nonlinear crystal.