Abstract: A method of treating polycrystalline diamond includes providing a leaching agent within a vessel, placing a polycrystalline diamond body within the vessel such that the polycrystalline diamond body contacts the leaching agent, and applying a vacuum pressure in the vessel at an interval, where the interval includes at least one cycle, each cycle having a duration measured from the time the vacuum pressure is applied to the time the vacuum pressure is removed, and a frequency at which the at least one cycle is conducted.

Abstract: Methods for preparing a silicon bonded PCD material involving a one step, double sweep process and drilling cutters made by such processes are disclosed. The PCD material includes thermally stable phases in the interstitial spaces between the sintered diamond grains. The method sweeps a diamond powder with a binder to form sintered PCD, reacts said molten binder with a temporary barrier separating said binder and said diamond from a silicon (Si) source, and sweeps said sintered PCD with said Si source to form SiC bonded PCD.

Abstract: A method of manufacturing grooved polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of defects in the polishing layers are minimized.

Abstract: A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: A method of forming a substantially homogeneous suspension of nanodiamond particles and microdiamond particles is disclosed The method includes disposing a first functional group on a plurality of nanodiamond particles to form derivatized nanodiamond particles, and combining the derivatized nanodiamond particles with a plurality of microdiamond particles and a solvent to form a substantially homogeneous suspension of the derivatized nanodiamond particles and microdiamond particles in the solvent. A method of making an article is also disclosed. The method includes forming a superabrasive polycrystalline diamond compact by combining: a plurality of derivatized nanodiamond particles, a plurality of derivatized microdiamond particles having an average particle size greater than that of the derivatized nanodiamond particles, and a metal solvent-catalyst. The method also includes combining the polycrystalline diamond with a substrate comprising a ceramic.