Patents Examined by Alic W. Tang
  • Structure comprising platinum layer bound to a surface of a silicon oxide layer
    Patent number: 5969419
    Abstract: By treating the silicon-oxide insulating layer of a semiconductor device with an aqueous metal-salt solution of a metal of an ion radius of less than 0.110 nm, for example, Sc, La or Zr, before a platinum electrode layer is provided on the insulating layer, the platinum layer shows excellent adhesive properties.
    Type: Grant
    Filed: September 8, 1994
    Date of Patent: October 19, 1999
    Assignee: U.S. Philips Corporation
    Inventors: Rudolf P. Tijburg, Karel M. Van Der Waarde