Patents Examined by Amara E. Lim
  • Patent number: 5063113
    Abstract: A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
    Type: Grant
    Filed: July 21, 1989
    Date of Patent: November 5, 1991
    Assignee: Fujitsu Limited
    Inventor: Kunihiko Wada
  • Patent number: 5051298
    Abstract: Free standing, optically clear, poly(acrylate) or poly(methacrylate) film having dispersed therein silica which is produced in situ from an alkoxysilane, using acid catalysis and a substantially stoichiometric amount of water for hydrolysis. The film forming process comprises a drying and curing step conducted in an open system. The temperatures and pH employed determine the nature and morphology of the dispersed silica phase. The film-forming process is conducted in the substantial absence of a polymerizable substance other than the alkoxysilane.
    Type: Grant
    Filed: March 20, 1989
    Date of Patent: September 24, 1991
    Assignee: Eastman Kodak Company
    Inventors: Christine J. T. Landry, Bradley K. Coltrain
  • Patent number: 5045400
    Abstract: Disclosed is a composition for metallizing a ceramic surface which consists essentially of 10.0 to 32.5% by weight of Mn, 45.0 to 67.5% by weight of W, up to 5.0% by weight of at least one member selected from Ti and Zr, and Ag and Ni in a total amount of 15.0 to 35.0% by weight, the amount of Ni being 5.0 to 20.0% by weight of the total amount of Ni and Ag. This composition is applied to the surface of a ceramic body in the form of a metal paste or metal powder and heat-fusion-bonded to the ceramic surface, or the composition is applied to the surface of a ceramic body by the gas-phase deposition method.
    Type: Grant
    Filed: February 1, 1990
    Date of Patent: September 3, 1991
    Assignee: Nippon Hybrid Technologies Co., Ltd.
    Inventor: Kiyoyuki Esashi
  • Patent number: 5043222
    Abstract: The present invention relates to a glass for making glass to metal seals. The coefficient of thermal expansion of the glass is in excess of 160.times.10.sup.-7 in/in/.degree.C. making the glass particularly useful for sealing copper and copper based alloys. The glass has particular utility in the manufacture of electronic packages and multi-layer circuitry.
    Type: Grant
    Filed: April 23, 1990
    Date of Patent: August 27, 1991
    Assignee: Olin Corporation
    Inventor: Satyam C. Cherukuri
  • Patent number: 5019451
    Abstract: Non-centrosymmetric films are shown that exhibit pyroelectric and piezoelectric properties. The films, which comprise alternating layers of omega-tricosenoic acid and omega-tricosenoic amine of up to nine layers thick, and alternatively, layers of polymeric amphiphiles that utilize their liquid crystalline side chains to impose order on the lamiante structures, are useful in constructing devices for measuring temperature and pressure functions.
    Type: Grant
    Filed: April 27, 1989
    Date of Patent: May 28, 1991
    Assignee: Edison Polymer Innovation Corp.
    Inventor: Jerome B. Lando