Patents Examined by Amir Zorabian
  • Method of forming CMOS imager with storage capacitor
    Patent number: 6852591
    Abstract: A CMOS imager having an improved signal to noise ratio and improved dynamic range is disclosed. The CMOS imager provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager. The storage capacitor may be a flat plate capacitor formed over the pixel, a stacked capacitor or a trench imager formed in the photosensor. The CMOS imager thus exhibits a better signal-to-noise ratio and improved dynamic range. Also disclosed are processes for forming the CMOS imager.
    Type: Grant
    Filed: April 26, 2002
    Date of Patent: February 8, 2005
    Assignee: Micron Technology, Inc.
    Inventor: Howard E. Rhodes