Abstract: In order to obtain long time stability and usefulness for gas sensitive field-effect devices a micro structured surface is obtained below the final conducting layer. The conductive layer in the trenches or grooves will not only be protected to some extent but also they can constitute a conductive net with edges or boundaries that will remain essentially unchanged even if material is continuously lost along the borderline. The structure can be obtained in the layer laying directly below the conductive layer or in deeper lying layers with intermediate layers with even thickness.
Abstract: A semiconductor device for generating spin-polarized conduction electrons including a ferromagnetic semiconductor layer and a non-magnetic semiconductor layer having a band alignment of Type II with respect to the ferromagnetic semiconductor, said ferromagnetic semiconductor layer and non-magnetic semiconductor layer being connected together directly or with interposing therebetween another non-magnetic semiconductor layer or energy barrier layer such that a spin splitting of a conduction band of the non-magnetic semiconductor layer is induced by a spontaneous spin splitting of a valence band of the ferromagnetic semiconductor layer, and spin-polarized conduction electrons are generated in the non-magnetic semiconductor layer by the spin splitting of the conduction band of the non-magnetic semiconductor layer.
Abstract: A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.
Type:
Grant
Filed:
April 19, 1999
Date of Patent:
July 17, 2001
Assignee:
Taiwan Semiconductor Manufacturing Company