Patents Examined by Andrew Guffin
  • Anisotropic deposition of silicon dioxide
    Patent number: 5013691
    Abstract: In a radio-frequency plasma deposition reactor (10), SiO.sub.2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH.sub.3 or NF.sub.3 which inhibits SiO.sub.2 deposition, along with a radio-frequency power in excess of 100 watts, which preferentially removes the inhibiting gas from horizontal surfaces through ion impact.
    Type: Grant
    Filed: July 31, 1989
    Date of Patent: May 7, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Earl R. Lory, Leonard J. Olmer