Patents Examined by Andrew J Golden
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Patent number: 10454413Abstract: A solar cell module includes a first solar cell, a second solar cell disposed with a gap from the first solar cell, and a light reflection sheet bridging between the first solar cell and the second solar cell across the gap. The light reflection sheet is at least partially bent between the first and second solar cells.Type: GrantFiled: March 11, 2016Date of Patent: October 22, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Akimichi Maekawa, Junpei Irikawa, Tasuku Ishiguro, Haruhisa Hashimoto, Hiroshi Kanno
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Patent number: 10434756Abstract: The present invention relates to photovoltaic modules backsheets (10) on base of preferably high molecular weight, impact resistant, shrinkage and thermal (flow) resistant FPP (Flexible Polypropylene) compositions preferably containing functional particles or being coextruded with a primer adhesive layer (13a) to obtain highly reliable adhesion on EVA adhesive layers (5). In one embodiment, the backsheet (10) has a functional PO adhesive layer (13b) allowing direct adhesion to cells back-contacts, i.e. without the use of an EVA adhesive layer (5). In a further embodiment, the backsheet (10), with functional PO adhesive layer (13b), allows the use of an upper adhesive layer (2) which is a surface functionalized transparent TPO film.Type: GrantFiled: July 16, 2010Date of Patent: October 8, 2019Inventor: Francois Rummens
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Patent number: 10418186Abstract: Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure including organic cations, cations of a metallic atom other than elements belonging to Group I of the periodic table, and anions, and at least some of the organic cations constituting the compound are organic cations having a silyl group and a solar cell using the photoelectric conversion element. Also provided is a composition containing a compound represented by Formula (1a) and a halogenated metal. R13Si-L-NR23Hal??Formula (1a) In the formula, R1, R2, and L are specific groups. Hal represents a halogen atom.Type: GrantFiled: July 25, 2017Date of Patent: September 17, 2019Assignee: FUJIFILM CorporationInventors: Hirotaka Satou, Kenji Shirokane, Toshihiro Ise, Katsumi Kobayashi
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Patent number: 10396229Abstract: A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.Type: GrantFiled: May 9, 2011Date of Patent: August 27, 2019Assignee: International Business Machines CorporationInventors: Joel P. De Souza, Harold J. Hovel, Daniel A. Inns, Jeehwan Kim, Christian Lavoie, Devendra K. Sadana, Katherine L. Saenger, Davood Shahrjerdi, Zhen Zhang
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Patent number: 10367449Abstract: A micro-concentrator module includes a cover glass provided with solar cells on one side thereof. The cover glass is adapted to hover above a substrate containing an array of MEMS based reflectors. Springs between the cover glass and the substrate displace the cover glass from a stowed position during transport to a deployed operational position above the substrate. Tethers connecting the cover glass with the substrate limit the displacement of the cover glass to a distance corresponding to the focal length of the reflectors.Type: GrantFiled: February 18, 2016Date of Patent: July 30, 2019Assignee: The Boeing CompanyInventor: Ray A. Stribling
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Patent number: 10355159Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.Type: GrantFiled: November 6, 2015Date of Patent: July 16, 2019Assignee: SOLAR JUNCTION CORPORATIONInventors: Pranob Misra, Rebecca Elizabeth Jones-Albertus, Ting Liu, Ilya Fushman, Homan B. Yuen
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Patent number: 10333015Abstract: The present invention relates to a solar cell assembly, comprising a solar cell attached to a bonding pad and a cooling substrate and wherein the bonding pad and the cooling substrate are joined to each other in a planar and flush manner such that the bonding pad and the cooling substrate are connected to each other in the form of a solid state connection. The invention further relates to a solar cell assembly that includes a solar cell attached to a bonding pad and a cooling substrate and wherein the bonding pad is attached on a surface of the cooling substrate such that the bonding pad and the cooling substrate are connected to each other in the form of a solid state connection. Also, a method for manufacture of such solar cell assemblies is provided.Type: GrantFiled: February 22, 2011Date of Patent: June 25, 2019Assignee: Saint-Augustin Canada Electric Inc.Inventors: Martin Ziegler, Sascha Van Riesen
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Patent number: 10304985Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.Type: GrantFiled: May 20, 2015Date of Patent: May 28, 2019Assignee: International Business Machines CorporationInventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Patent number: 10304977Abstract: A method, system and apparatus including a device cell having a top side, a bottom side and opposing side walls. A passivation layer is formed along the top side, the bottom side and opposing side walls of the device cell. The passivation layer serves to passivate the device cell and facilitate carrier collection around the device cell. An anti-reflective layer is formed over the passivation layer and an optical layer is formed on the top side of the device cell. The optical layer reflects light within the device cell. The apparatus may further include a reflective layer formed along the bottom side of the device cell, the reflective layer to reflect light internally within the device cell.Type: GrantFiled: May 11, 2015Date of Patent: May 28, 2019Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: Murat Okandan, Gregory N. Nielson, Jose Luis Cruz-Campa, Paul J. Resnick, Carlos Anthony Sanchez
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Patent number: 10304984Abstract: A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.Type: GrantFiled: September 7, 2012Date of Patent: May 28, 2019Assignee: International Business Machines CorporationInventors: Stephen W. Bedell, Keith E. Fogel, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Patent number: 10287677Abstract: Methods of fabricating a graphene film are disclosed. An example method can include providing a substrate, heating the substrate between about 600° C. and about 1100° C. in a chamber, and introducing a carbon source into the chamber at a temperature between about 600° C. and about 1100° C. for about 10 seconds to about 1 minute. The method can further include cooling the substrate to about room temperature to form the graphene film Methods of fabricating pillared graphene nano structures and graphene based devices are also provided.Type: GrantFiled: November 18, 2013Date of Patent: May 14, 2019Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Cengiz S. Ozkan, Mihrimah Ozkan, Ali B. Guvenc, Rajat K. Paul, Jian Lin, Maziar Ghazinejad, Miro Penchev, Shirui Guo, Jiebin Zhong
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Patent number: 10283658Abstract: Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.Type: GrantFiled: September 14, 2015Date of Patent: May 7, 2019Assignee: The Board of Regents of the University of OklahomaInventor: Rui Q. Yang
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Patent number: 10199524Abstract: Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.Type: GrantFiled: January 13, 2012Date of Patent: February 5, 2019Assignee: International Business Machines CorporationInventors: Bahman Hekmatshoartabari, Devendra K. Sadana, Wilfried E. Haensch, Ghavam G. Shahidi, Davood Shahrjerdi
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Patent number: 10096789Abstract: Embodiments of the invention pertain to the use of alloyed semiconductor nanocrystals for use in solar cells. The use of alloyed semiconductor nanocrystals offers materials that have a flexible stoichiometry. The alloyed semiconductor may be a ternary semiconductor alloy, such as AxB1-xC or AB1-yCy, or a quaternary semiconductor alloy, such as AxByC1-x-yD, AxB1-xCyD1-y or ABxCyD1-x-y (where A, B, C, and D are different elements). In general, alloys with more than four elements can be used as well, although it can be much harder to control the synthesis and quality of such materials. Embodiments of the invention pertain to solar cells having a layer incorporating two or more organic materials such that percolated paths for one or both molecular species are created. Specific embodiments of the invention pertain to a method for fabricating nanostructured bulk heterojunction that facilitates both efficient exciton diffusion and charge transport.Type: GrantFiled: May 23, 2008Date of Patent: October 9, 2018Assignee: University of Florida Research Foundation, Inc.Inventor: Jiangeng Xue
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Patent number: 10071907Abstract: A photovoltaic cell comprises a first electrode that includes a first transparent conductive substrate, a first layer having a plurality of first semiconductor nanofibers, and a second layer having a plurality of second semiconductor super-fine fibers, the first semiconductor nanofibers having an average diameter smaller than an average diameter of the second semiconductor super-fine fibers, a light absorbing material adsorbed to at least some of the first semiconductor nanofibers and second semiconductor super-fine fibers, a second electrode includes a second transparent conductive substrate, and electrolytes dispersed in the first and second layers.Type: GrantFiled: September 26, 2011Date of Patent: September 11, 2018Assignee: THE HONG KONG POLYTECHNIC UNIVERSITYInventors: Wallace Woon-fong Leung, Lijun Yang
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Patent number: 10069020Abstract: The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.Type: GrantFiled: March 13, 2013Date of Patent: September 4, 2018Assignee: E I DU PONT DE NEMOURS AND COMPANYInventors: Alan Frederick Carroll, Kenneth Warren Hang, Brian J. Laughlin, Kurt Richard Mikeska, Carmine Torardi, Paul Douglas Vernooy