Abstract: Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Abstract: There is provided a production method for a resist composition purified product, which includes a step (i) of filtering a resist composition with a filter having a porous structure in which adjacent spherical cells are connected to each other. The filter includes a porous membrane containing at least one resin selected from the group consisting of polyimide and polyamide imide. The resist composition contains a base material component (A) that exhibits changed solubility in a developing solution under action of acid, an onium salt, and an organic solvent component (S), where the content of the organic solvent component (S) is 97% by mass or more.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.

Abstract: A negative resist composition is provided comprising a base polymer, a quencher in the form of a sulfonium salt of a weaker acid than a sulfonic acid which is fluorinated at ?- and/or ?-position of the sulfo group, the sulfonium salt having at least two polymerizable double bonds in the molecule, and an acid generator capable of generating a sulfonic acid which is fluorinated at ?- and/or ?-position of the sulfo group. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

Abstract: A method for manufacturing a semiconductor device includes forming a resist structure including forming a resist layer including a resist composition over a substrate. After forming the resist layer, the resist layer is treated with an additive. The additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator.

Abstract: To provide a negative photosensitive resin composition which exhibits satisfactory resolution even when shifts occur in focus depth, and which has satisfactory adhesion to a mold resin and exhibits a low dielectric constant; a method for producing a polyimide using the photosensitive resin composition; a method for producing a cured relief pattern; and a semiconductor device including the cured relief pattern. Disclosed is a negative photosensitive resin composition including a polyimide precursor having a structure represented by general formula (A1), (B) a photopolymerization initiator, and (C) a solvent.

Abstract: An organically modified metal oxide nanoparticles that can be produced by a simple method and can increase the sensitivity and resolution of a resist material. The EUV photoresist material contains organically modified metal oxide nanoparticles and a solvent. The organically modified metal oxide nanoparticles include a core, a first modification group, and a second modification group. The core includes a plurality of metal atoms and a plurality of oxygen atoms bonded to the plurality of metal atoms. The first modification group is a carboxylic acid carboxylate ligand coordinated to the core. The second modification group is a carboxylic acid carboxylate ligand coordinated to the core and having a smaller molecular weight than the first modification group and/or an inorganic anion smaller in size than the first modification group.

Abstract: An X-ray-sensitive film includes an acid-hydrolyzed palm mesocarp, a starch, a cellulose, a synthetic polymer, a plant hydrogel, a cyanoacrylate adhesive, glycerin, and an x-ray-sensitive dye. A method of preparing the X-ray-sensitive film includes 32.5 to 45 wt % cellulose based on a total weight of the X-ray-sensitive film, a tensile modulus of 0.75 to 2.5 GPa, a tensile strength of 75 to 125 MPa/kg·m3, a water absorption of 0.00 to 0.16% measured according to ASTM D570, a carbonate content of 100 to 200 ppm, and shows no cracks when tested according to ASTM D5419.

Abstract: Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.

Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).

Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).

Abstract: The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and W1 represents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Abstract: An X-ray-sensitive film includes an acid-hydrolyzed palm mesocarp, a starch, a cellulose, a synthetic polymer, a plant hydrogel, a cyanoacrylate adhesive, glycerin, and an x-ray-sensitive dye. A method of preparing the X-ray-sensitive film includes 32.5 to 45 wt % cellulose based on a total weight of the X-ray-sensitive film, a tensile modulus of 0.75 to 2.5 GPa, a tensile strength of 75 to 125 MPa/kg·m3, a water absorption of 0.00 to 0.16% measured according to ASTM D570, a carbonate content of 100 to 200 ppm, and shows no cracks when tested according to ASTM D5419.

Abstract: An energy-sensitive composition including a polysilane, a base generator, and a solvent, the base generator including a compound represented by formula (b1) and a photo base generator: in which Rb1 to Rb3 each independently represents a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfonato group, phosphino group, phosphinyl group, phosphonato group or organic group; Rb4 and Rb5 each independently represent a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonato group, phosphino group, phosphinyl group, phosphono group, phosphonato group or aliphatic group; and Rb6 represents a hydrogen atom, alkyl group or alkoxy group.

Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion.

Abstract: As described herein, photosensitive composition comprises RSnL3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C?CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.

Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.