Patents Examined by Andrew Preston Traywick
  • Patent number: 12135503
    Abstract: Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: November 5, 2024
    Assignee: International Business Machines Corporation
    Inventors: Gerhard Ingmar Meijer, Valery Weber, Peter Willem Jan Staar
  • Patent number: 12111573
    Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: October 8, 2024
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventor: Takuya Ikeda
  • Patent number: 12111574
    Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: October 8, 2024
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventor: Takuya Ikeda
  • Patent number: 12105420
    Abstract: The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and W1 represents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: October 1, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Keisuke Niida, Daisuke Kori, Yasuyuki Yamamoto, Takayoshi Nakahara, Tsutomu Ogihara
  • Patent number: 12099291
    Abstract: An X-ray-sensitive film includes an acid-hydrolyzed palm mesocarp, a starch, a cellulose, a synthetic polymer, a plant hydrogel, a cyanoacrylate adhesive, glycerin, and an x-ray-sensitive dye. A method of preparing the X-ray-sensitive film includes 32.5 to 45 wt % cellulose based on a total weight of the X-ray-sensitive film, a tensile modulus of 0.75 to 2.5 GPa, a tensile strength of 75 to 125 MPa/kg·m3, a water absorption of 0.00 to 0.16% measured according to ASTM D570, a carbonate content of 100 to 200 ppm, and shows no cracks when tested according to ASTM D5419.
    Type: Grant
    Filed: April 18, 2024
    Date of Patent: September 24, 2024
    Assignee: IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY
    Inventors: ABM Sharif Hossain, Mohammed Saad Aleissa, Hassan Ahmed Rudayni, Salem Ali S. Alyami, Mohammed Musa Zahrany, Nasir A. Ibrahim
  • Patent number: 12099297
    Abstract: An energy-sensitive composition including a polysilane, a base generator, and a solvent, the base generator including a compound represented by formula (b1) and a photo base generator: in which Rb1 to Rb3 each independently represents a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfonato group, phosphino group, phosphinyl group, phosphonato group or organic group; Rb4 and Rb5 each independently represent a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonato group, phosphino group, phosphinyl group, phosphono group, phosphonato group or aliphatic group; and Rb6 represents a hydrogen atom, alkyl group or alkoxy group.
    Type: Grant
    Filed: October 26, 2021
    Date of Patent: September 24, 2024
    Assignees: TOKYO OHKA KOGYO CO., LTD., Tokyo University of Science Foundation
    Inventors: Kunihiro Noda, Dai Shiota, Koji Arimitsu
  • Patent number: 12094719
    Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: September 17, 2024
    Assignee: YOUNG CHANG CHEMICAL CO., LTD
    Inventors: Su Jin Lee, Gi Hong Kim, Seung Hun Lee, Seung Hyun Lee
  • Patent number: 12072626
    Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: August 27, 2024
    Assignee: Inpria Corporation
    Inventors: Benjamin L. Clark, Gaetano Giordano, Shu-Hao L. Chang, Dominick Smiddy, Mark Geniza, Craig M. Gates, Jan Doise, Peter de Schepper
  • Patent number: 12032291
    Abstract: As described herein, photosensitive composition comprises RSnL3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C?CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: July 9, 2024
    Assignee: Inpria Corporation
    Inventors: Robert E. Jilek, Kai Jiang, Amrit K. Narasimhan
  • Patent number: 12032293
    Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: July 9, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Daisuke Kori, Takayoshi Nakahara, Yasuyuki Yamamoto, Hironori Satoh, Tsutomu Ogihara
  • Patent number: 12013635
    Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: June 18, 2024
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyungsoo Moon, Eunmi Kang, Jaehyun Kim, Jimin Kim, Changsoo Woo, Hwansung Cheon, Seungyong Chae, Seung Han
  • Patent number: 11988964
    Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: May 21, 2024
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Patent number: 11988963
    Abstract: Disclosed and claimed herein are photoimageable dielectric compositions for dielectric passivation layers, dielectric protection layers as well as dielectric redistribution layers for use in the manufacture of semiconductors, semiconductor packages and circuit board constructions. More specifically it relates to photoimageable polymers containing vinyl groups capable of being crosslinked during processing and post cured at lower temperatures and shorter times than conventional dielectric materials. The processed compositions are characterized by low dielectric constants and low dissipation factors as well as low moisture uptake, chemical and thermal stability, flexibility and excellent HAST (Highly Accelerated Stress Test) and TCT (Thermal Cycling Test) results. The invention also relates to low dk/df dielectric compositions that are not photoimageable.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: May 21, 2024
    Inventors: Daniel J Nawrocki, Yasumasa Akatsuka, Katie Han
  • Patent number: 11982940
    Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
    Type: Grant
    Filed: May 8, 2023
    Date of Patent: May 14, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eunkyung Lee, Sumin Kim, Hyunwoo Kim, Juhyeon Park, Giyoung Song, Sukkoo Hong, Yoonhyun Kwak, Youngmin Nam, Byunghee Sohn, Sunyoung Lee, Aram Jeon, Sungwon Choi
  • Patent number: 11965101
    Abstract: A three-dimensional dye, a manufacturing method of the three-dimensional dye, and a photoresist mixture are disclosed. A non-planar three-dimensional dye molecular structure is constructed by adding a three-dimensional structure group into a dye molecule, thereby breaking the strong attraction force between the planar conjugation of the dye molecule. Aggregation of dye molecules are prevented, influence of dye molecules on optical paths is eliminated, and thus optical properties and color rendering properties of color filters made by a photoresist liquid are improved.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: April 23, 2024
    Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
    Inventors: Lin Ai, Hong Meng
  • Patent number: 11892773
    Abstract: A photosensitive resin composition, a patterning process performed using the photosensitive resin composition, a cured film formed by curing the pattern, and an electronic component having the cured film. The photosensitive resin composition includes a resin, a photosensitizer, a surfactant containing a structural unit represented by formula (1), and a solvent, where Y1 and Y2 each independently represent a hydrogen atom, a methyl group, a phenyl group, or a group represented by formula (2), at least one of Y1 and Y2 is a group represented by formula (2), R1 to R6 are monovalent hydrocarbon groups that may be the same or different and optionally contain a heteroatom, having 1 to 20 carbon atoms, “1” and “n” are each independently integers of 1 to 100, and “m” is an integer of 0 to 100.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: February 6, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroyuki Urano, Masashi Iio, Katsuya Takemura
  • Patent number: 11886117
    Abstract: An adhesion promoter as shown in Formula (I) and a photosensitive resin composition containing the adhesion promoter are disclosed: where R1, R2 and R3 each refer to a hydrogen atom, an optionally substituted C1-C20 alkyl, an optionally substituted C2-C20 alkenyl, an optionally substituted C2-C20 alkynyl, an optionally substituted phenyl, or other optionally substituted carbon atom; A refers to an optionally substituted C1-C20 alkyl, an optionally substituted C2-C20 alkenyl, an optionally substituted C2-C20 alkynyl, an optionally substituted phenyl, or other an optionally substituted carbon atom substituents; and the carbon in the alkyl, the alkenyl, the alkynyl, the phenyl, or the carbon atom substituents is optionally substituted with one or more of N, O and S; and X refers to an optionally substituted aromatic heterocyclic group. The adhesion promoter and the photosensitive resin composition can be used for manufacturing a semiconductor integrated circuit (IC), a LED and a flat-panel display.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: January 30, 2024
    Assignee: SHANDONG SHENGQUAN NEW MATERIALS CO LTD.
    Inventors: Diyuan Tang, Zhifang Li, Ke Bai, Bin Liu, Chuanming Sun
  • Patent number: 11860536
    Abstract: The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: January 2, 2024
    Assignee: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: BongSoo Kim, Myeong Jae Lee
  • Patent number: 11840503
    Abstract: A salt represented by formula (I), a generator and a resist composition: wherein R1 and R2 each independently represent an iodine atom, a fluorine atom or an alkyl fluoride group having 1 to 6 carbon atoms; R4, R5, R7 and R8 each independently represent a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O—, —CO—, —S— or —SO2—; X1 and X2 each independently represent an oxygen atom or a sulfur atom; m1 represents 1 to 5, m2 and m8 represent 0 to 5, and m4, m5 and m7 represent an integer of 0 to 4, in which 1?m1+m7?5, 0?m2+m8?5; and AI? represents an organic anion.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: December 12, 2023
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Katsuhiro Komuro, Koji Ichikawa
  • Patent number: 11835860
    Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: December 5, 2023
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Jun Hatakeyama