Abstract: A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

Abstract: Methods of fabricating an object via direct laser lithography are provided. In embodiments, such a method comprises illuminating, via an optical fiber having an end facet and a metalens directly on the end facet, a location within a photosensitive composition from which an object is to be fabricated with light, thereby inducing a multiphoton process within the photosensitive composition to generate a region of the object; and repeating the illuminating step one or more additional times at one or more additional locations to generate one or more additional regions of the object.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a solubility in a developer, which changes by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation; and an acid diffusion control agent, in which a molecular weight of the acid diffusion control agent is 420 or more, and a distance Ra between a Hansen solubility parameter of the acid diffusion control agent and a Hansen solubility parameter of the air satisfies 15?Ra?45.

Abstract: The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R1 and R2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

Abstract: A method, apparatus, and system for processing a material stack. A hydrogen silsesquioxane layer is deposited on the material stack. A diffusion barrier layer is deposited on the hydrogen silsesquioxane layer to form a bilayer. The diffusion barrier layer comprises a material having a thickness that increases an amount of time before the hydrogen silsesquioxane layer ages to change a dose in an electron beam needed to expose the hydrogen silsesquioxane layer for a selected feature geometry with a desired width. The electron beam is directed through a surface of the bilayer to form an exposed portion of the bilayer. The electron beam applies the dose that is selected based on a pattern density of features for the material stack to have a desired level of exposure of the hydrogen silsesquioxane layer for the selected feature geometry. The hydrogen silsesquioxane layer is developed. The exposed portion remains on material stack.

Abstract: To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance. A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydro-carbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film. Use of the cured film.

Abstract: An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.

Abstract: The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is a method for producing an actinic ray-sensitive or radiation-sensitive resin composition including at least a resin having a polarity that increases due to decomposition by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a solvent, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of a compound (I) to (III) below, and the actinic ray-sensitive or radiation-sensitive resin composition is produced by mixing a first solution including the resin having a polarity that increases by the action of an acid and a first solvent with the one or more compounds selected from the group consisting of the compound (I) to (III).

Abstract: A method, includes: reacting at least one donor group with at least one protected acceptor group to form a plurality of protecting group-containing OSC polymers; removing the protecting group from the plurality of protecting group-containing OSC polymers to form H-bonding sites; and fusing the H-bonding sites of a first OSC polymer backbone with H-bonding sites of a second OSC polymer backbone to form ?-? interactions between conjugated OSC polymers.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.

Abstract: Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Abstract: A negative resist composition is provided comprising a base polymer, a quencher in the form of a sulfonium salt of a weaker acid than a sulfonic acid which is fluorinated at ?- and/or ?-position of the sulfo group, the sulfonium salt having at least two polymerizable double bonds in the molecule, and an acid generator capable of generating a sulfonic acid which is fluorinated at ?- and/or ?-position of the sulfo group. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.

Abstract: There is provided a production method for a resist composition purified product, which includes a step (i) of filtering a resist composition with a filter having a porous structure in which adjacent spherical cells are connected to each other. The filter includes a porous membrane containing at least one resin selected from the group consisting of polyimide and polyamide imide. The resist composition contains a base material component (A) that exhibits changed solubility in a developing solution under action of acid, an onium salt, and an organic solvent component (S), where the content of the organic solvent component (S) is 97% by mass or more.

Abstract: To provide a negative photosensitive resin composition which exhibits satisfactory resolution even when shifts occur in focus depth, and which has satisfactory adhesion to a mold resin and exhibits a low dielectric constant; a method for producing a polyimide using the photosensitive resin composition; a method for producing a cured relief pattern; and a semiconductor device including the cured relief pattern. Disclosed is a negative photosensitive resin composition including a polyimide precursor having a structure represented by general formula (A1), (B) a photopolymerization initiator, and (C) a solvent.

Abstract: A method for manufacturing a semiconductor device includes forming a resist structure including forming a resist layer including a resist composition over a substrate. After forming the resist layer, the resist layer is treated with an additive. The additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator.

Abstract: An organically modified metal oxide nanoparticles that can be produced by a simple method and can increase the sensitivity and resolution of a resist material. The EUV photoresist material contains organically modified metal oxide nanoparticles and a solvent. The organically modified metal oxide nanoparticles include a core, a first modification group, and a second modification group. The core includes a plurality of metal atoms and a plurality of oxygen atoms bonded to the plurality of metal atoms. The first modification group is a carboxylic acid carboxylate ligand coordinated to the core. The second modification group is a carboxylic acid carboxylate ligand coordinated to the core and having a smaller molecular weight than the first modification group and/or an inorganic anion smaller in size than the first modification group.

Abstract: An X-ray-sensitive film includes an acid-hydrolyzed palm mesocarp, a starch, a cellulose, a synthetic polymer, a plant hydrogel, a cyanoacrylate adhesive, glycerin, and an x-ray-sensitive dye. A method of preparing the X-ray-sensitive film includes 32.5 to 45 wt % cellulose based on a total weight of the X-ray-sensitive film, a tensile modulus of 0.75 to 2.5 GPa, a tensile strength of 75 to 125 MPa/kg·m3, a water absorption of 0.00 to 0.16% measured according to ASTM D570, a carbonate content of 100 to 200 ppm, and shows no cracks when tested according to ASTM D5419.