Patents Examined by Anh Pgung
  • Patent number: 7095656
    Abstract: Provided is concerned with a method of erasing a NAND flash memory device, capable of restraining an erasing disturbance fail arising from a deselected cell block and improving a product yield of the device by applying a negative voltage to a well of a high voltage transistor forming an X-decoder during an erasing operation in the NAND flash memory device.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: August 22, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventor: Keun Woo Lee