Abstract: An output circuit includes a first transistor coupled to an external terminal and having a gate terminal that receives a first drive signal. The first transistor pulls down a potential at the external terminal when activated in accordance with the first drive signal. The output circuit also includes a capacitor. The capacitor includes a first end coupled to the gate terminal of the first transistor. A clamp circuit, coupled to a second end of the capacitor, clamps the second end of the capacitor to a potential corresponding to the operation of the first transistor. The first transistor includes a drain terminal that is not coupled to the capacitor but is coupled to the external terminal.

Abstract: Some embodiments include apparatus and methods having a clock path with a combination of current-mode logic (CML) based and complementary metal-oxide semiconductor (CMOS) components.

Abstract: A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.