Patent number: 4839097
Abstract: This is a voltage-dependent non-linear resistance ceramic composition wherein resistance of crystal is decreased by containing SrTiO.sub.3 as host material, and Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 as semiconductorization accelerating agent, and further by adding as additive one kind or more oxide of element selected from the group consisting of MnO.sub.2, Ga, Pt, Tl, Si, Ti, Li, La, Cu, Y, Cs, Au, Mo, S, Be, Al, Na, K, Ca, Cd, In, Ba, Pb, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Mg, Zr, Sn, Sb and W, these additive is segregated at crystal granule boundaries, thereby making the crystal granule boundaries to high resistance.Accordingly, by the high resistance layer at the crystal boundaries the varistor characteristic is obtainable, and a capacitance characteristic is obtainable between the crystal granule-crystal granule boundary-crystal granule.
Type:
Grant
Filed:
February 9, 1987
Date of Patent:
June 13, 1989
Assignee:
Matsushita Electric Industrial Co., Ltd.
Inventors:
Keiichi Noi, Akihiro Takami, Kazuhide Ebine, Kimiko Kumazawa