Abstract: A resist composition comprising a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) comprising an acid generator (B1) composed of a compound represented by general formula (b1-1) shown below [wherein, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, provided that a ring skelton of the cyclic group contains an —SO2— bond or an —O—SO2— bond, and at least one carbon atom which is not adjacent to the —SO2— bond or the —O—SO2— bond has an oxygen atom as a substituent; Q1 represents a divalent linking group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; and A+ represents an organic cation].
Abstract: Disclosed is a top coating composition formed on a resist film, for protecting the resist film, the top coating composition being a top coating composition for photoresist, characterized by containing a fluorine-containing polymer having a repeating unit represented by the following general formula (1). This composition is capable of controlling developing solution solubility and has a high water repellency. [In the formula, R1 represents a hydrogen atom, fluorine atom, methyl group or trifluoromethyl group, R2 represents a heat-labile protecting group, R3 represents a fluorine atom or fluorine-containing alkyl group, and W is a bivalent linking group.
Abstract: A processing solution (or developer) has been designed for use to washout non-polymerized photopolymer compositions to prepare flexographic printing plates having flexographic relief images. This processing solution includes one or more esters of monobasic carboxylic acids represented by one or both of Structures (I) and (II) defined herein and one or more aliphatic or aromatic alcohols.
January 28, 2010
Date of Patent:
January 21, 2014
Eastman Kodak Company
Elsie A. Fohrenkamm, M. Zaki Ali, Michael B. Heller, Kevin M. Kidnie
Abstract: An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.
Abstract: Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.
Abstract: The present invention provides a compound represented by the formula (C1): wherein Rc2 represents a C6-C10 aromatic hydrocarbon group having at least one nitro group and Rc1 represents a group represented by the formula (1): wherein Rc4 represents a hydrogen atom etc., Rc5 represents a C1-C30 divalent hydrocarbon group, and Rc3 represents a group represented by the formula (3-1), (3-2) or (3-3): wherein Rc6, Rc7, Rc8, Rc9, Rc10, Rc11, Rc12, Rc13 and Rc14 each independently represent a C1-C30 hydrocarbon group, and a photoresist composition comprising a resin, an acid generator and the compound represented by the formula (C1).