Abstract: In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.

Abstract: A width-measurement method of reducing or eliminating an error in measurement of a width of an object on a sample resulting from the dimension of the beam diameter, wherein a width-measured value of the object to be width-measured which has been obtained on the basis of a secondary signal obtained from secondary particles emitted from the sample having thereon the object to be width-measured is corrected with a value with respect to a dimension value of a beam diameter.

Abstract: Disclosed is a high field asymmetric waveform ion mobility spectrometer (FAIMS) with optical based detection of selectively transmitted ions. Light from a light source is directed through an optical port in an electrode of the FAIMS. A light detector is provided for receiving light that is one of transmitted and scattered by the selectively transmitted ions within the FAIMS.

Abstract: An ultraviolet illumination equipment including a receptacle with a window, a dielectric-barrier discharge lamp located within the receptacle for emitting ultraviolet radiation through the window, and a heater for heating the window to at least 100° C.

Abstract: A preferred storage system includes a container, a closure lid, and a compression link. Preferably, the container includes an outer wall, which defines an interior, and a first open end. The closure lid is configured to be inserted within the open end of the container, and is adapted to engage in a sealing relationship with the outer wall of the container. Preferably, the compression link includes a container engagement surface and a closure lid engagement surface. The compression link is configured to engage between the closure lid and the outer wall of the container to retain the closure lid in sealing engagement with the container. The container engagement surface and the closure lid engagement surface are configured to extend outwardly from each other, with the container engagement surface being adapted to engage the outer wall of the container and the closure lid engagement surface being adapted to engage the closure lid. Methods also are provided.

Abstract: The present invention relates to an apparatus and method for focusing, separating, and detecting gas-phase ions using the principles of quadrupole fields, substantially at or near atmospheric pressure. Ions are entrained in a concentric flow of gas and travel through a high-transmission element into a RF/DC quadrupole, through a second high-transmission element, and then impact on an ion detector, such as a faraday plate; or through an aperture with subsequent identification by a mass spectrometer. Ions with stable trajectories pass through the RF/DC quadrupole while ions with unstable trajectories drift off-axis collide with the rods and are lost. Embodiments of this invention are devices and methods for focusing, separating and detecting gas-phase ions without the need for a vacuum chamber when coupled to atmospheric ionization sources.

Abstract: A technique for providing a grid for a gate such as utilized in gating a stream of ions or other particles in a spectrometer instrument. The grid of wires may, for example, be a so-called Bradbury-Nielson Gate that consists of a set of two electrically isolated sets of equally spaced wires that lie substantially in the same plane and alternate in potential. The method utilized to provide is to first fabricate a frame of an insulating substrate having a hole and depositing metal film patterns such that conductive portions are formed on either side of the hole. Conductive portions on either side form a series of terminating pads on the portion of the substrate closest to the hole and a bus bar. Grid wires are then formed by stretching a section of wire with desired constant tension across the hole and bonding the ends of the wire to a respective one of the pads on one side and bus bar on the other side. The method provides a rapid, inexpensive way to fabricate such modulating devices.

Abstract: The present invention is related to an apparatus and method for irradiating product packages (1). One measures the effective dimension of a product package (1), one processes a product package (1) having everywhere an effective thickness below a predefined threshold with an e-beam source (17), and other packages with either a gas sterilisant device or an X-ray or gamma source. Packages for treating with the X-ray or gamma source are grouped in layers and stacked, in order to optimise the throughput of the apparatus.

Abstract: The present invention provides a multiple part capillary for use in mass analysis instruments. Specifically, a multiple part capillary comprising at least two capillary sections joined with airtight seal by a union for use in mass spectrometry (particularly with ionization sources) to transport ions between pressure regions of a mass spectrometer for analysis is described herein. Preferably, the capillary is useful to transport ions from an elevated pressure ionization source to a first vacuum region of a mass analysis system.

Abstract: An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.

Abstract: In a method for forming, with the aid of an electron beam (6), a polyline on a substrate (4) coated with a radiation-sensitive resist, the electron beam (6) is directed onto a surface of the substrate (4) in the direction of a Z coordinate, and the substrate (4) is displaced relative to the electron beam (6) in an X-Y plane in individual steps. After each individual step of the displacement, the electron beam (6) acts with a predefined energy input on the substrate (4) during a halt in the displacement motion. The energy input for each individual step is determined as a function of the shape of the polyline ascertained from several preceding individual steps. Also described is a corresponding apparatus with which, using electron beam lithography, it is possible to form polylines with a very uniform line width. The method and apparatus are particularly suitable for writing curved polylines.

Abstract: An ion detector (27) for use in a time-of-flight mass spectrometer (1) is disclosed. The ion detector (27), which has an extended dynamic range, comprises at least one microchannel plate electron multiplier (42, 32) together with first and second collection electrodes (36, 38; 39). The second collection electrode (36, 38) is arranged such that in receives more electrons per ion entering the ion detector (27) than the first collection electrode (39). In one embodiment the collection electrodes (36, 38; 39) are formed in an array consisting of a larger plate-like collection electrode (36, 38) and a smaller plate-like collection electrode (39). In an alternative embodiment a second microchannel plate electron multiplier is arranged between the first collection electrode (46) and the second collection electrode (47).

Abstract: During closer inspection with a local defect area being magnified, it is desirable to reduce image acquisition time by making the number of stage moves as few as possible so that a defect can be observed efficiently.

Abstract: The present invention provides a nanospray means and method for use in mass analysis instruments. Specifically, a nanospray assembly is composed in part of a base, union, retainer, and nanospray needle, and an entrance cap, first capillary section, and union. Adjustments to the position of the nanospray needle within this assembly are made independent of the remainder of the ion source. The nanospray assembly is integrated with the remainder of the source by joining the first capillary section (of the nanospray assembly) with a second capillary section which is fixed in the body of the source.

Abstract: Disclosed is an observation apparatus and method using an electron beam, capable of measuring stress and strain information on a crystal structure in a specimen using electron beam diffraction images. A method according to the invention includes mounting a specimen on a specimen stage; irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area; irradiating a specific portion included in the predetermined area and acquiring a diffraction image showing the crystal structure in the specimen; extracting information on the crystal structure in the specimen; displaying the information of the crystal structure in the specimen so as to be superimposed on the acquired enlarged image. The observation method according to the invention can obtain information on the crystal structure in a specimen with a high degree of sensitivity and with a high level of resolution.

Abstract: The present invention provides a pulse power system for extreme ultraviolet and x-ray light sources. The pulse power system produces electrical pulses of at least 12 J at pulse repetition rates of at least 2000 Hz. The system is extremely reliable and has design lifetime substantially in excess of 10 billion pulses. The system includes a charging capacitor bank, a fast charger for charging the charging capacitor bank in time periods of less than 0.5 seconds. A voltage control circuit is provided for controlling the charging voltage capacitor to within less than 0.5 percent of desired values. The system includes a magnetic compression circuit for creating, compressing in duration and amplifying voltage pulses. A trigger circuit discharges the charging capacitor bank into the pulse compression circuit so as to produce EUV or x-ray light pulses with a timing accuracy of less than 10 ns.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm that can be opened or closed. Methods of using a pellicle are also described.

Abstract: A method of inspecting contact holes or via holes in a semiconductor device. Plural small measurement regions Q are established on the whole sample surface. The measurement regions Q are successively irradiated with an electron beam. At this time, an absorption current flowing across the sample is detected and amplified by a current amplifier. A control unit stores data about the absorption current signal derived from the small regions Q in locations of a memory which are addressed corresponding to the positions of the small regions. The control unit reads data about absorption current intensity values from the memory and classifies the intensity values into four intensity ranges, for example, to which different brightness intensities are assigned.

Abstract: A particle beam apparatus includes a source for providing a primary particle beam along a primary beam axis, an objective lens for focussing the primary particle beam onto a specimen so as to release particles therefrom, and a detection system for image generation. The objective lens includes an immersion lens for decelerating the primary particle. The detection system includes a converter with a conversion area to convert the released accelerated particles into secondary particles, an electrode for influencing the converted secondary particles and at least one detector for detecting the converted secondary particles. The detection system is arranged in front of the immersion lens. The converter and the electrode control the converted secondary particles so as to prevent the converted secondary particles released at a specific part of the conversion area from reaching the detector.

Abstract: A method for determining the distance of a scanning probe of a scanning probe microscope from a specimen surface to be examined comprising the steps of: exciting the scanning probe to oscillations lateral to a surface to be examined; recording at least one amplitude signal and a frequency signal and a phase signal of the oscillating scanning probe; superimposing a vertically oscillating movement of the scanning probe and specimen surface to be examined relative to one another is superimposed on the oscillation of the scanning probe lateral to the specimen surface to be examined; and determining the distance of the scanning probe from the specimen surface from at least one of the amplitude signal and a frequency signal and a phase signal.