Abstract: A light-emitting package includes an encapsulating member, a plurality of light-emitting components disposed in the encapsulating member, a plurality of first electrode pads, a plurality of second electrode pads, and a plurality of conductive connection structures. The encapsulating member has a first surface and a second surface opposite to each other. Each light-emitting component has a light-emitting surface exposed on the first surface. Both the first electrode pads and the second electrode pads are exposed on the second surface. A first bonding surface of each first electrode pad and a second bonding surface of each second electrode pad are both flush with the second surface. The light-emitting components disposed on the first electrode pads are electrically connected to the first electrode pads. The conductive connection structures passing through the encapsulating member are electrically connected to the light-emitting components and the second electrode pads.

Abstract: A light-emitting device efficiently performs wavelength conversion and includes a light-emitting element having a light-emitting surface, a wavelength conversion member having an incident surface that is larger than the light-emitting surface of the light-emitting element, a light-transmissive member that includes a first portion disposed across a lateral surface of the light-emitting element and the incident surface of the wavelength conversion member, and a light-reflective member disposed to cover the lateral surface of the light-emitting element while being in contact with the first portion of the light-transmissive member. The incident surface of the wavelength conversion member faces the light-emitting surface of the light-emitting element and has an outer periphery located outward of an outer periphery of the light-emitting surface.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate, the substrate having an insulating layer with an opening and having a metal layer under the opening, wherein a part of the metal layer does not serves as a portion of a thin film transistor; providing a carrier substrate supporting a plurality of light emitting diodes; conducting a testing to the plurality of LEDs on the carrier substrate; transferring at least one of the plurality of LEDs from the carrier substrate to the opening of the substrate; and fixing the at least one of the plurality of LEDs to the substrate.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: The present application provides an electronic package having an optoelectronic component and a laser component disposed on a packaging unit, with the optoelectronic component and the laser component being separated from each other. Since the laser component and the optoelectronic component are separated from each other, the electronic package has a reduced fabrication difficulty and a high yield rate. A method for fabricating the electronic package and an electronic packaging module having the electronic package are also provided.

Abstract: The invention relates to a light emitting device comprising: a support, at least two light-emitting elements at a top side of the support, first connection locations and a single second connection location at a bottom side of the support, wherein each light-emitting element comprises a first contact location and a second contact location at a side facing away from the support, each first contact location is connected to one of the first connection locations via a first connection, all of the second contact locations are connected to the second connection location via a second connection, the first connections run along an outer surface of the support, and the second connection runs through the support.

Abstract: A light emitting device includes: a resin package including first and second leads, and a resin part defining a recess defined by a lateral wall and an upward-facing surface, which includes an upper surface of a portion of each of the first lead, the second lead, and the resin part; and a light emitting element on the first lead. The resin part includes a holding resin portion between the first and second leads at the upward-facing surface, and a covering resin portion that covers a portion of the upper surface of the holding resin portion and a portion of an upper surface of at least one of the first and second leads. A portion of an upper surface of the holding resin portion is exposed from the covering resin portion, and is located on the same plane as the upper surfaces of the first and second leads.

Abstract: A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

Abstract: In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

Abstract: A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

Abstract: Multi-semiconductor chip modules that have a substrate with a substrate surface, one or more first substrate connections, and one or more second substrate connections. One or more first semiconductor chips (chips) has one or more larger first chip connections and one or more smaller first chip connections on a first chip bottom surface. One or more of the larger first chip connections physically and electrically connected to a respective first substrate connection. One or more second chips has one or more larger second chip connections and one or more smaller second chip connections on a second chip bottom surface. One or more of the larger second chip connections physically and electrically connected to a respective second substrate connection. A bridge has a bridge thickness, a bridge surface, and one or more bridge connections on the bridge surface. A first part of the bridge surface is under the first chip bottom surface and a second part of the bridge surface is under the second chip bottom surface.

Abstract: A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.

Abstract: Embodiments include forming an interposer having reinforcing structures disposed in a core layer of the interposer. The interposer may be attached to a package device by electrical connectors. The reinforcing structures provide rigidity and thermal dissipation for the package device. Some embodiments may include an interposer with an opening in an upper core layer of the interposer to a recessed bond pad. Some embodiments may also use connectors between the interposer and the package device where a solder material connected to the interposer surrounds a metal pillar connected to the package device.