Abstract: An integrated circuit structure includes a flash memory cell and a logic MOS device. The flash memory cell includes a floating gate dielectric, a floating gate overlying the floating gate dielectric, a control gate overlying the floating gate, a word-line on a first side of the floating gate and the control gate, and an erase gate on a second side of the floating gate and the control gate. The logic MOS device includes a high-k gate dielectric, and a gate electrode over the high-k gate dielectric. The gate electrode, the control gate, the word-line, and the erase gate are formed of a same metal-containing material, and have top surfaces coplanar with each other.

Abstract: An exemplary lead frame includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes a first connecting surface and a second connecting surface spaced from the first connecting surface. Top surfaces of the bonding electrode, the first connecting electrode and the second connecting electrode are exposed out of the substrate to support and electrically connect with light emitting chips. Light emitting chips can be mounted on the lead frame and electrically connect with each other in parallel or in series; thus, the light emitting chips can be connected with each in a versatile way.

Abstract: An organic light emitting display includes a base substrate, a first transistor, an insulation layer having a first contact hole and a second contact hole, a first electrode, an organic layer, a second electrode and a pixel definition layer having a third contact hole. The second electrode may be connected to the first transistor through the second contact hole, and the second electrode may be connected to other devices. The second electrode may be connected to a switching device.

Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over a semiconductor epitaxial layer in order to emit various colored-lights including white light. The light-emitting device can include a semiconductor chip substrate configured not to transmit light emitted from the epitaxial layer and mounted on a mounting board, and a transparent resin layer located between the wavelength converting layer and the epitaxial layer mounted on the semiconductor chip substrate so as to extend from a side surface of the wavelength converting layer towards a substantially edge portion of the semiconductor chip substrate. The semiconductor light-emitting device can be configured to improve a color variability of a mixture light emitted from the device by using the transparent resin layer and the wavelength converting layer, and therefore can emit the mixture light having a substantially uniform color tone from a small light-emitting surface.

Abstract: A light emitting diode (LED) and a method for manufacturing the same is disclosed. The disclosed LED comprises a first substrate, an epitaxy layer, and a plurality of bumps. The first substrate is doped with YAG: Ce and is for converting a first light with a first range of wavelength to a second light with a second range of wavelength. The epitaxy layer is disposed on the first substrate and is for emitting the first light. The plurality of bumps are disposed on the epitaxy layer. With the first substrate doped with YAG: Ce, the disclosed LED does not need additional phosphor to convert the first light with the first range of wavelength to the second light with the second range of wavelength.

Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.

Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

Abstract: A zirconium oxide based dielectric material is used in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the zirconium oxide based dielectric is doped. In some embodiments, the dopant includes at least one of aluminum, silicon, or yttrium. In some embodiments, the zirconium oxide based dielectric is formed as a nanolaminate of zirconium oxide and a dopant metal oxide.

Abstract: A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations.

Abstract: Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. A gate dielectric layer is formed above the gate electrode. An interface layer is formed above the gate dielectric material. An IGZO channel layer is formed above the interface layer. A source electrode and a drain electrode are formed above the IGZO channel layer. The interface layer includes a material different than that of the gate dielectric layer and the IGZO channel layer.