Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Abstract: A method includes steps of: acquiring a target wavelength; acquiring a drive condition of a wavelength tunable laser diode; driving the wavelength tunable laser diode based on the drive condition; acquiring a measured value of the first current measured by a first photodetector, a measured value of a second current measured by a second photodetector and a measured value of the drive condition; determining the measured value of the first current as a first target value; calculating a second target value of the second current from the measured value of the drive condition and the target value of the first current; and coinciding a ratio of the measured value of the first current with respect to the measured value of the second current, to a ratio of the first target of the first current with respect to the second target of the second current, by changing the drive condition.

Abstract: The present invention is directed to an ultra-compact dual quantum cascade laser assembly that nearly doubles the strength of a traditional laser in a in a single hermetically sealed micropackage. The device may comprise two quantum cascade lasers that meet at a combiner to create a single laser with a higher strength than traditional lasers. The current invention provides a path to an ultra-compact coherent beam combing arrangement that uses both dichroic beam combining and polarization beam combining techniques.

Abstract: The description relates to laser control. One example can include a laser that has a laser emitter configured to generate a laser beam for intervals of time (e.g., pixel times). The laser can have a compensation and control component configured to receive a predicted laser emitter temperature of the laser emitter, obtain a desired optical power for an interval, and compute a compensated electrical current for the interval utilizing multiple light to current look up tables. Individual light to current look up tables can relate to specific laser emitter temperatures.

Abstract: A lead frame strip with corrugated saw street metal where the corrugated saw street metal is comprised of a partial thickness of the lead frame strip metal. A lead frame strip with corrugated saw street metal where the corrugated saw street metal is comprised of a half thickness of the lead frame strip metal.

Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between.

Abstract: A low noise, single mode laser includes a semiconductor gain element generating light and having a highly reflective first end forming a first end of a laser cavity. The gain element may be monolithically or discretely integrated with, or distinct from, and coupled to a waveguide comprised of a low loss material with a refractive index ‘n’ greater than 3. The waveguide includes a Bragg grating forming the second end of the laser cavity. A cavity phase control section may be provided between the gain element and the Bragg grating. Two photodetector monitors provide a feedback signal for locking the light from the gain element to a specific wavelength on the Bragg grating reflection spectrum by varying at least one of the cavity phase control section and the gain element bias current. The Bragg grating may have a physical length larger than 10 mm and that occupies at least 50% of the optical length of the external cavity.

Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.

Abstract: A method for generating single optical pulses of picosecond-range duration with suppressed transient emission tails.

Abstract: An optoelectronic device includes a silicon substrate, with a silicon waveguide layer disposed over the silicon substrate and including an optical waveguide. One or more through-silicon vias (TSVs) extend through the silicon substrate and contact the silicon waveguide layer. A III-V base layer is disposed over the silicon waveguide layer, and an optical amplifier is disposed on the III-V base layer and optically coupled to the optical waveguide.

Abstract: Provided is a tunable semiconductor laser including an active gain region in which an optical signal is generated according to a modulation signal, a mode control region in which a resonant mode is controlled according to a mode control signal, and a signal chirp of the optical signal is compensated according to a first compensation signal determined based on the modulation signal, and a distributed Bragg reflector (DBR) region in which an oscillation wavelength of the optical signal is determined based on a wavelength selection signal for the optical signal, a second compensation signal for compensating for a thermal chirp of the optical signal on a basis of the modulation signal, and a heater signal provided to a heater electrode.

Abstract: A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.

Abstract: The object is to provide a technology capable of efficiently injecting a current into a core layer of a buried waveguide. On one end side of the substrate, a buried waveguide including a core layer, a cladding layer, and a current blocking layer is disposed, both sides of the core layer in a layer-stacking direction are sandwiched by the cladding layer, and both sides of the core layer in a width direction that is perpendicular to the layer-stacking direction are sandwiched by the current blocking layer. On another end side of the substrate, a ridge waveguide including the core layer and the cladding layer is disposed, and both sides of the core layer in the layer-stacking direction are sandwiched by the cladding layer.

Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A housing 10 is provided with a groove V1a into which an electrode 3b of a laser oscillation element 30a and an electrode 3a of a laser oscillation element 30b are inserted. Inside the groove V1a, there exists a conductive layer 12 configured to electrically connect the electrode 3b of the laser oscillation element 30a and the electrode 3a of the laser oscillation element 30b.

Abstract: The technology disclosed in this patent document allows mode locking of both selected longitudinal and transverse modes to produce laser pulses. The laser light produced based on such mode locking exhibits a 3-dimensional mode profile based on the locked longitudinal and transverse modes.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.

Abstract: A laser device includes a plurality of laser diodes that generate laser light beams having different wavelengths from each other, a partial reflective mirror constituting a resonator along with the laser diodes, a wavelength dispersive element set in the resonator, which combines parts of the laser light beams outputted by the laser diodes to each other, emits the combined parts of the laser light beams as a first laser light beam toward the partial reflective mirror, and emits other parts of the laser light beams as second laser light beams in directions different from the direction toward the partial reflective mirror, and an output detecting unit detecting intensities of the second laser light beams.

Abstract: In general the present disclosure is directed to a temperature control device, e.g., a TEC, that includes a top plate with at least first and second contact pads to allow for a soldering process to attach optical components to the first contact pad without causing one or more layers of the second contact pad to reflow and solidify with an uneven mounting surface. Thus, optical components such as a focus lens can be mounted to the second contact pad via, for instance, thermal epoxy. This avoids the necessity of a submount to protect the focus lens from the relatively high heat introduced during a soldering process as well as maintain the flatness of the second contact pad within tolerance so that the mounted focus lens optically aligns by virtue of its physical location/orientation with other associated optical components coupled to the first contact pad, e.g., a laser diode.